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Publikováno v:
IEEE Transactions on Power Electronics. 33:1143-1153
In this paper, a new low-loss turn- on concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under
Autor:
Anders Wiberg
Publikováno v:
Zeitschrift für Angewandte Chemie. 41:1338-1342