Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Anders Söderbärg"'
Publikováno v:
Diamond and Related Materials. 5:1457-1461
Properties of the silicon/diamond interface are investigated in terms of leakage current measurements of silicon pn-junction diodes. Two different types of pre-treatment and deposition methods of polycrystalline diamond were investigated, microwave a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88cc613fd0b32fbc1dea704d5596835
https://doi.org/10.1016/s0925-9635(96)00564-x
https://doi.org/10.1016/s0925-9635(96)00564-x
Publikováno v:
Journal of The Electrochemical Society. 143:1709-1714
Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces prior to wafer bonding. The chemical oxide thickness can be adjusted between 0 and 10 Angstrom by tuning the HF content of the mixt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::220fe7b3a2a72ecb5c7b793b5ee6f607
https://doi.org/10.1149/1.1836705
https://doi.org/10.1149/1.1836705
Publikováno v:
Journal of The Electrochemical Society. 143:1326-1334
The chemical stability of polycrystalline diamond subjected to common silicon device integrated circuit process steps has been investigated using Raman spectroscopy, scanning electron microscopy, I‐V, and capacitance‐voltage. Wet chemical process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8bfeea5417f3b8a7587d51c15297a3
https://doi.org/10.1149/1.1836638
https://doi.org/10.1149/1.1836638
Autor:
Stefan Bengtsson, Ylva Bäcklund, Mats Bergh, M. O. Andersson, Karin Ljungberg, Anders Söderbärg
Publikováno v:
Journal of The Electrochemical Society. 142:1297-1303
The effects of preparation of silicon surfaces in hydrofluoric acid solutions, prior to direct wafer bonding, is investigated. Surface analysis with atomic force microscopy, electron spectroscopy for chemical analysis, and estimation of the surface p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fead3d7b7441edb8890db75eebd7458
https://doi.org/10.1149/1.2044167
https://doi.org/10.1149/1.2044167
Autor:
C. Sture Petersson, Anders Söderbärg, Göran Thungström, Stefan Johansson, Anna‐Lisa Tiensuu, Karin Ljungberg
Publikováno v:
Journal of The Electrochemical Society. 141:2829-2833
A buried conductive layer in silicon has been created using wafer bonding technique, with a cobalt interfacial layer.Co-coated silicon wafers were brought into contact with either similar or uncoated wafers at room temperature. CoSi2 wasthen formed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f3c7b3423fc894ff4858b5d61d373c
https://doi.org/10.1149/1.2059239
https://doi.org/10.1149/1.2059239
Publikováno v:
Sensors and Actuators A: Physical. 43:311-316
The nozzle design for a colour ink-jet print head using Hertz's continuous ink-jet method is described. A multiple jet implementation with eight jets per colour is developed by using silicon nozzle array plates manufactured by micromachining. Three d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612d0afc9c78a18369e54458ab5ad6a2
https://doi.org/10.1016/0924-4247(93)00707-b
https://doi.org/10.1016/0924-4247(93)00707-b
Publikováno v:
Journal of The Electrochemical Society. 141:562-566
The choice of surface treatment prior to silicon wafer bonding is crucial both for the reliability of the bonding process and the electrical properties of the bonded structure. In the case of silicon direct bonding for manufacturing of buried electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9341500acc0ab406b4dc573a22073be
https://doi.org/10.1149/1.2054767
https://doi.org/10.1149/1.2054767
Publikováno v:
Microelectronic Engineering. 22:379-382
Effects of substrate biasing of lateral bipolar transistors (LBTs) on thin SOI have been investigated. It was found that the current gain can be increased by a factor of several decades. This effect is explained by a changed base charge condition whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60581b7258884f0ed0018a07511cb47a
https://doi.org/10.1016/0167-9317(93)90192-8
https://doi.org/10.1016/0167-9317(93)90192-8
Autor:
Anders Söderbärg, Leif Smith
Publikováno v:
Journal of The Electrochemical Society. 140:271-275
The formation of etch-stop layers in silicon micromachining is important in fabricating three-dimensional structures. Etch-stop layers also are important in fabricating SOI-material with BESOI-technique. We present here an electrochemical etch stop,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c535ce9c4383184c6789a20696f7c5a
https://doi.org/10.1149/1.2056101
https://doi.org/10.1149/1.2056101
Autor:
Anders Söderbärg
Publikováno v:
Journal of The Electrochemical Society. 139:561-566
A novel way to fabricate a buried etch stop layer in silicon is presented in this article. The etch stop layer is formed by nitrogen implantation and the investigations show that a dose of 1.10 17 14 N + -ions/cm 2 at 140 keV is enough to effectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81af6714fe6f13297e9ceab3c61b831d
https://doi.org/10.1149/1.2069258
https://doi.org/10.1149/1.2069258