Zobrazeno 1 - 10
of 345
pro vyhledávání: '"Anders Hallén"'
Autor:
Tuan T. Tran, Jennifer Wong-Leung, Lachlan A. Smillie, Anders Hallén, Maria G. Grimaldi, Jim S. Williams
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041115-041115-7 (2023)
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thoug
Externí odkaz:
https://doaj.org/article/e9406f6c3aea454bbbe93b91074742fe
Publikováno v:
Medžiagotyra, Vol 17, Iss 2, Pp 119-124 (2011)
n- and p-type 4H-SiC epilayers were grown on heavily doped SiC substrates. The thickness of the p-type layer was 7 µm and the doping level around 1017 cm 3, while the n-type epilayers were 15 µm thick and had a doping concentration of 3 - 5*1015 cm
Externí odkaz:
https://doaj.org/article/97f8844bf0ef433a874c15012f0be03c
Publikováno v:
AIP Advances, Vol 4, Iss 10, Pp 107101-107101-6 (2014)
Gold nanoparticle films are of interest in several branches of science and technology, and accurate sample characterization is needed but technically demanding. We prepared such films by DC magnetron sputtering and recorded their mass thickness by Ru
Externí odkaz:
https://doaj.org/article/01301596795c45c892018816930fbbd9
Autor:
Elena Shipitsyna, Annika Roos, Raluca Datcu, Anders Hallén, Hans Fredlund, Jørgen S Jensen, Lars Engstrand, Magnus Unemo
Publikováno v:
PLoS ONE, Vol 8, Iss 4, p e60670 (2013)
BACKGROUND AND OBJECTIVE: Bacterial vaginosis (BV) is the most common vaginal disorder, characterized by depletion of the normal lactobacillus-dominant microbiota and overgrowth of commensal anaerobic bacteria. This study aimed to investigate the com
Externí odkaz:
https://doaj.org/article/525f8e4fbf554cb1bcff0ae144ceebfa
Publikováno v:
Key Engineering Materials. 946:119-124
In this paper, Shockley-Read-Hall (SRH) lifetime depth profiles in the drift layer of 10 kV SiC PiN diodes are calculated after MeV proton implantation. It is assumed that the carbon vacancy will be the domination trap for charge carrier recombinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f27281ba28b29289fc52ec23e9bd52a
https://doi.org/10.4028/p-zo030o
https://doi.org/10.4028/p-zo030o
Autor:
Zimo Yuan, Keijo Jacobs, Mietek Bakowski, Per Ranstad, Adolf Schöner, Sergey Reshanov, Wlodek Kaplan, Hans Peter Nee, Anders Hallén
Publikováno v:
Materials Science Forum. 1062:442-446
In this paper, proton implantation with different combinations of MeV energies and doses from 2×109 to 1×1011 cm-2 is used to create defects in the drift region of 10 kV 4H-SiC PiN diodes to obtain a localized drop in the SRH lifetime. On-state and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627edc7d3cc2c5b4adc2eaaf5f4e973d
https://doi.org/10.4028/p-5po40a
https://doi.org/10.4028/p-5po40a
Autor:
Martins Zubkins, Viktors Vibornijs, Edvards Strods, Edgars Butanovs, Liga Bikse, Mikael Ottosson, Anders Hallén, Jevgenijs Gabrusenoks, Juris Purans, Andris Azens
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b624e8843579e79b4bfbf7bd9ee9e01d
Publikováno v:
IEEE Transactions on Power Electronics. 36:5874-5891
The performance of theoretical ultrahigh-voltage power semiconductor devices has been predicted by means of numerical simulations using the Sentaurus technology computer-aided design tool. A general silicon carbide punch-through insulated-gate bipola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d691a64c6f6dffd16486d73c40e6b432
https://doi.org/10.1109/tpel.2020.3027370
https://doi.org/10.1109/tpel.2020.3027370
Publikováno v:
Materials Science Forum. 1004:689-697
Channeling phenomena during ion implantation have been studied for 50 keV11B, 100 keV27Al and 240 keV71Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d51f96f88e77ca61be76b51bf25ec6ed
https://doi.org/10.4028/www.scientific.net/msf.1004.689
https://doi.org/10.4028/www.scientific.net/msf.1004.689
Autor:
Kai Tian, Anders Hallén, Weihua Liu, Menghua Wang, Ange Li, Muhammad Nawaz, Jinwei Qi, Shuwen Guo, Shenhui Ma, Karim Elgammal
Publikováno v:
IEEE Transactions on Electron Devices. 66:4279-4286
In this article, the static, dynamic, and short-circuit properties of 1.2-kV commercial 4H-SiC planar and trench gate metal–oxide–semiconductor field-effect transistors (MOSFETs) are compared and analyzed in a wide temperature range from 90 to 49
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf57643f9561f0bdcb97ab74cdb1b093
https://doi.org/10.1109/ted.2019.2934507
https://doi.org/10.1109/ted.2019.2934507