Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Anbang Zhang"'
Publikováno v:
Heliyon, Vol 10, Iss 9, Pp e30418- (2024)
Objective: To explore the preventive effect of electroacupuncture pretreatment on stroke in rats by inhibiting ferroptosis and oxidative stress. Methods: Rats were randomly assigned to the sham, middle cerebral artery occlusion/reperfusion (MCAO/R),
Externí odkaz:
https://doaj.org/article/8a7c8141a7e949d090f5dc1b7babffd4
Autor:
Jian Wang, Anbang Zhang, Boya Wang, Jingmeng Yuan, Junchi Zhu, Mengjiao Li, Henli Liu, Lijuan Cheng, Ping Kong
Publikováno v:
Frontiers in Neurology, Vol 14 (2023)
Ossified intracranial meningiomas (OIM) and ossified spinal meningiomas (OSM) are rare neoplasms of mesenchymal origin that predominantly manifest in the spinal cord and infrequently in the cranial region, accounting for ~0. 7–5.5% of all meningiom
Externí odkaz:
https://doaj.org/article/515fbfc04dc54289b185fc3cace19423
Publikováno v:
Egyptian Journal of Biological Pest Control, Vol 32, Iss 1, Pp 1-9 (2022)
Highlights Steinernema glaseri (Sgib strain) could be used as biocontrol agent for A. hetaohei larvae because of the better anti-desiccation ability and pathogenicity. Sgib strain showed high infectivity to the cocooned larvae as well as the mature l
Externí odkaz:
https://doaj.org/article/1c452446611e49799a4cfd4b7010f409
Publikováno v:
Heliyon, Vol 9, Iss 2, Pp e13273- (2023)
In the context of Covid-19, the present study examined the relationship between anxiety and smartphone addiction and tested the mediation role of attentional control and executive dysfunction. Four hundred and twenty-one Chinese undergraduate student
Externí odkaz:
https://doaj.org/article/ebbe5ef140fa4b1d895244e279a7e123
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Abstract In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation lay
Externí odkaz:
https://doaj.org/article/38d1c512fdc94e3182c620ebc5275fb4
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Abstract An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated
Externí odkaz:
https://doaj.org/article/0162624a6b5b42639b376eb895dc87d2
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al2O3/GaN MOS devices. By featuring only one single peak in the parallel conductance (G p/ω) characteristics in the deep depletion region,
Externí odkaz:
https://doaj.org/article/c85d83cff5864ff0a59e58a4486f035a
Autor:
Jing Wang, Shangqian Zhao, Anbang Zhang, Haoxiang Zhuo, Gangning Zhang, Fujuan Han, Yi Zhang, Ling Tang, Rong Yang, Lijun Wang, Shigang Lu
Publikováno v:
ACS Applied Energy Materials. 6:3671-3681
Publikováno v:
ACS Applied Materials & Interfaces. 15:8190-8199
Autor:
Guohua Li, Zhimin Ren, Haoxiang Zhuo, Changhong Wang, Biwei Xiao, Jianwen Liang, Ruizhi Yu, Ting Lin, Alin Li, Tianwei Yu, Wei Huang, Anbang Zhang, Qinghua Zhang, Jiantao Wang, Xueliang Sun
Publikováno v:
ENERGY & ENVIRONMENTAL MATERIALS.