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pro vyhledávání: '"Anatoliy I. Khokhlov"'
Autor:
Elena N. Abramova, Roman Yu. Kozlov, Anatoliy I. Khokhlov, Yuriy V. Syrov, Yuriy N. Parkhomenko
Publikováno v:
Конденсированные среды и межфазные границы, Vol 26, Iss 1 (2024)
Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, t
Externí odkaz:
https://doaj.org/article/748f52e95dce46bda70c3fef048843b9
