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pro vyhledávání: '"Anatolij Govorkov"'
Autor:
Lev Diakonov, Alexsandr Donskov, Tatiana Yugova, Vladimir Pavlov, Alexsandr Polykov, Sergej Malahov, Anatolij Govorkov, Mikhail Mezhennyi, Yulia Kozlova, Alexsandr Markov
Publikováno v:
Physica B: Condensed Matter. 404:4919-4921
GaN films were grown by hydride vapor phase epitaxy on sapphire substrates with orientations c -(0 0 0 1), a -(1 1 2¯ 0), m -(1 0 1¯ 0) and r -(1 0 1¯ 2) using N 2 as a carrier gas. The crystalline perfection of the grown films was studied by X-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1565e5d4ab2124f8dc15a303d0b4e53
https://doi.org/10.1016/j.physb.2009.08.211
https://doi.org/10.1016/j.physb.2009.08.211
