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pro vyhledávání: '"Anatolii M. Strel'chuk"'
Autor:
Alexander A. Lebedev, Vitali V. Kozlovski, Klavdia S. Davydovskaya, Roman A. Kuzmin, Mikhail E. Levinshtein, Anatolii M. Strel’chuk
Publikováno v:
Materials, Vol 15, Iss 23, p 8637 (2022)
In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (C–V)
Externí odkaz:
https://doaj.org/article/57e8dd165eab4ca5858797a131c97ca9
Publikováno v:
Materials Science and Engineering: B. 46:168-170
The objective of the present work was to prepare heterojunctions in the 3C-6H system and to investigate their characteristics. The heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited