Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Anatolii I. Kurchak"'
Autor:
Sergei V. Kalinin, Maksym V. Strikha, Anna N. Morozovska, Eugene A. Eliseev, Anatolii I. Kurchak
Publikováno v:
Acta Materialia
This work explores a nontrivial temperature behavior of the carriers concentration, which governs the conductance of the graphene channel on ferroelectric substrate with domain walls that is a basic element for field effect transistors of new generat
Publikováno v:
Journal of Applied Physics
We revealed that 180° domain walls in a strained ferroelectric film can induce p-n junctions in a graphene channel and lead to the nontrivial temperature and gate voltage dependences of the perpendicular modes of the integer quantum Hall effect (IQH
Publikováno v:
Journal of Applied Physics
Graphene on a ferroelectric can be a promising candidate to create advanced field effect transistors, modulators, and electrical transducers. Recently, we have shown that alternating “up” and “down” piezoelectric displacement of the ferroelec
Publikováno v:
Physical Review Applied. 8
$p-n$ junctions in graphene on a ferroelectric substrate have been studied as a possible basis for electronic devices, but what about the impact of the piezoelectric effect? What happens to graphene's properties when ferroelectric domain stripes of o
Autor:
Sergei V. Kalinin, Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha, Eugene A. Eliseev
Publikováno v:
Physical Review Applied. 8
Autor:
Sergei V. Kalinin, Eugene A. Eliseev, Nicholas V. Morozovsky, Maksym V. Strikha, Rama K. Vasudevan, Anatolii I. Kurchak, Anna N. Morozovska
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdc57670ce9af6e8232dc94317e66679
Publikováno v:
Journal of Applied Physics. 125:174105
The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it spin-asymmetr
Publikováno v:
Ukrainian Journal of Physics. 63:49
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on graphene-on-ferr
Publikováno v:
Journal of Applied Physics. 122:044504
We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states at the grap
Publikováno v:
Physical Review Applied
Two-dimensional (2D) transition-metal dichalcogenide (TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research. It should be noted that, unlike bulk TMDs, which are indirect-band semiconductor