Zobrazeno 1 - 10
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pro vyhledávání: '"Anatolii Dvurechenskii"'
Autor:
S. A. Rudin, Vladimir Zinovyev, Anatolii Dvurechenskii, E. E. Rodyakina, A. V. Novikov, M. V. Stepikhova, Zhanna Smagina
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
Experimental and calculated data on the creation of ordered groups of Ge (Si) quantum dots on structured SOI substrates are presented. The luminescence properties of the obtained structures, including those embedded in photonic crystals, are investig
Autor:
Anatolii Dvurechenskii, A. I. Yakimov
Publikováno v:
International Journal of High Speed Electronics and Systems. 12:873-889
We present an overview of the experimental results in the field of quantum dot infrared photodetectors (QDIPs) implemented on Ge self-assembled quantum dots (QDs) in Si. QDs are fabricated using Stranski-Krastanov epitaxial growth mode. The effect of
Publikováno v:
Physics-Uspekhi. 44:1304-1307
Publikováno v:
Nanoscale Research Letters
We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μ m and 8- to 12- μ m spectral regions with responsivity values
Autor:
Anatolii Dvurechenskii, S. B. Érenburg, Sergei Nikitenko, A. I. Nikiforov, Gennadii Kulipanov, Andrei I. Yakimov, N. V. Bausk
Publikováno v:
AIP Conference Proceedings.
Surface sensitive XAFS (X‐ray absorption fine structure) measurements based on total electron yield and fluorescence yield detection modes have been performed for pseudomorphous Ge films and clusters deposited on Si(001) and Si(111) substrate via m
Autor:
A. I. Nikiforov, A. I. Yakimov, Vyacheslav Timofeev, Anatolii Dvurechenskii, Aleksei Bloshkin
Publikováno v:
Nanoscale Research Letters
Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500°C are overgrown with Si at different temperatures Tcap, and effect of boron delta doping of Si barriers on the mid-infrared photoresponse was investigated. The photocurrent maximum shift
Autor:
D. K. Maude, V. A. Volkov, A. V. Veretennikov, Anatolii Dvurechenskii, Yu. N. Khanin, A. V. Subashiev, G. Hill, Laurence Eaves, Yurii E. Lozovik, E. E. Vdovin, D. Yu. Ivanov, J. C. Portal, P. C. Main, M. Henini, E.E. Takhtamirov, J.C. Maan, Yu. V. Dubrovskii, Andrew Levin, Amalia Patanè, Andrei I. Yakimov
Publikováno v:
Uspekhi Fizicheskih Nauk. 171:1365
Autor:
A. I. Yakimov, Leonid V. Sokolov, Yu. B. Bolkhovityanov, Anatolii Dvurechenskii, A. I. Nikiforov, O. P. Pchelyakov, Bert Voigtländer
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent publications. The presence of elastic strains in the epilayers and in
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Publikováno v:
Nanoscale Research Letters
We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct d
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 208 (2011)
Nanoscale Research Letters
Nanoscale Research Letters
We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band