Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Anatolii A. Mololkin"'
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 1, Pp 17-20 (2021)
Lithium niobate and tantalate are among the most important and widely used materials of acoustooptics and acoustoelectronics. They have high piezoelectric constants enabling their use as actuators. Their use is however restricted by the thermal insta
Externí odkaz:
https://doaj.org/article/760b44fb02ef4970a498adbb83ce38f2
Autor:
Simone Vadilonga, Dmitry Roshchupkin, Evgenii Emelin, Anatolii A. Mololkin, S. Sakharov, Olga Plotitcyna, Natalya Targonskaya, Luc Ortega, Dmitry Irzhak, Yuri Suhak, Vasilii K. Karandashev, Holger Fritze, Fahrtdinov Rashid, D. P. Kovalev, Redkin Boris S, Wolfram Leitenberger, T. S. Orlova
Publikováno v:
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials. 76:1071-1076
Ferroelectric LiNb1–x Ta x O3 solid solutions with various Nb/Ta ratio were grown from the melt by the Czochralski method. The exact composition of the grown crystals was determined by inductively coupled plasma atomic mass spectrometry. The depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a188da27d46a34cfd523209d272b58e8
https://doi.org/10.1107/s2052520620014390
https://doi.org/10.1107/s2052520620014390
Autor:
Roshchupkin D; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Emelin E; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Plotitcyna O; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Rashid F; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Irzhak D; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Karandashev V; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Orlova T; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Targonskaya N; Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Sakharov S; FOMOS Materials Co., Buzheninova St. 16, Moscow, 105023, Russian Federation., Mololkin A; FOMOS Materials Co., Buzheninova St. 16, Moscow, 105023, Russian Federation., Redkin B; Institute of Solid State Physics Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Fritze H; Clausthal University of Technology, Institute of Energy Research and Physical Technologies, Leibnizstraße 4, Clausthal-Zellerfeld, 38678, Germany., Suhak Y; Clausthal University of Technology, Institute of Energy Research and Physical Technologies, Leibnizstraße 4, Clausthal-Zellerfeld, 38678, Germany., Kovalev D; Merzhanov Institute of Structural Macrokinetics and Materials Science Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russian Federation., Vadilonga S; Institute for Nanometre Optics and Technology, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein Strasse 15, Berlin, 12489, Germany., Ortega L; Laboratoire de Physique des Solides, Univ. Paris-Sud, CNRS, UMR 8502, Orsay Cedex, F-91405, France., Leitenberger W; Universität Potsdam, Institut für Physik, Karl Liebknecht Str. 24-25, Potsdam, 14471, Germany.
Publikováno v:
Acta crystallographica Section B, Structural science, crystal engineering and materials [Acta Crystallogr B Struct Sci Cryst Eng Mater] 2020 Dec 01; Vol. 76 (Pt 6), pp. 1071-1076. Date of Electronic Publication: 2020 Nov 16.