Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Anatoli Rogozin"'
Autor:
Mykola Vinnichenko, Anatoli Rogozin, Matthias Krause, Sibylle Gemming, Arndt Mücklich, Frans Munnik, N. Shevchenko, Andreas Kolitsch, Wolfhard Möller
Publikováno v:
The Journal of Physical Chemistry C. 115:8798-8807
The conversion of ZnO into a p-type semiconductor remains a major challenge for its application in optoelectronic devices because up to now neither the suitable type of defects nor the possible role of secondary phase formation during doping has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec8fcb11f84a8bd359578d5d73004fec
https://doi.org/10.1021/jp1094307
https://doi.org/10.1021/jp1094307
Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum
Autor:
Andreas Kolitsch, M. Vinnichenko, N. Shevchenko, Wolfhard Möller, V. Cantelli, F. Prokert, Anatoli Rogozin
Publikováno v:
Applied Physics Letters. 85:212-214
Indium tin oxide films produced by reactive middle frequency magnetron sputtering were annealed in a vacuum. The electrical and optical properties of the film have been studied in situ along with direct characterization of the crystalline structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937d8dff8e3ea26db50173ec384a0046
https://doi.org/10.1063/1.1771456
https://doi.org/10.1063/1.1771456
Autor:
S. Cornelius, Raúl Gago, Anatoli Rogozin, Andreas Kolitsch, Frans Munnik, N. Shevchenko, Wolfhard Möller, M. Vinnichenko
Publikováno v:
Applied Physics Letters 96(2010)14, 141907
X-ray absorption near edge structure and x-ray diffraction studies with synchrotron radiation have been used to relate the electrical properties of ZnO:Al films to their bonding structure and phase composition. It is found that Al-sites in an insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af68d50f88562a51b8b8b6f9e1fd448
https://www.hzdr.de/publications/Publ-13558-1
https://www.hzdr.de/publications/Publ-13558-1
Autor:
Wolfhard Möller, N. Shevchenko, Anatoli Rogozin, M. Vinnichenko, S. Cornelius, Andreas Kolitsch
Publikováno v:
Applied Physics Letters 94(2009), 042103
The study is focused on improvement of the free electron mobility in Al-doped ZnO films grown by cost-effective deposition method of reactive pulsed magnetron sputtering. At optimum growth conditions it yields low absorbing films with Hall effect mob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e89f0cfcbf8b591e9bdf421b19dd3af4
https://www.hzdr.de/publications/Publ-11836-1
https://www.hzdr.de/publications/Publ-11836-1
Publikováno v:
Applied Physics Letters 89(2006)6, 061908
As a new method of indium tin oxide (ITO) annealing in vacuum, direct electric current flow through the film is proposed. ITO films of about 170 nm thickness were produced by reactive pulsed magnetron sputtering. During annealing at constant electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00903f0962f9a1e60f89c72d93d19010
https://doi.org/10.1063/1.2335808
https://doi.org/10.1063/1.2335808