Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Anastasiya E. Kireeva"'
Publikováno v:
Journal of Parallel and Distributed Computing. 158:186-195
A parallel implementation of a three-dimensional cellular automaton (CA) model of electron — hole transport in a semiconductor is presented. Carriers transport is described by a nonlinear system of drift-diffusion-Poisson equations. This system inc
Publikováno v:
The Journal of Supercomputing. 77:6889-6903
We suggest in this paper a parallel implementation of cellular automation and global random walk algorithms for solving drift–diffusion–recombination problems which in contrast to the classical random walk on spheres (RWS) methods calculate the s
Three-layer cellular automata model of the electrochemical oxidation of carbon Ketjen Black EC-600JD
Publikováno v:
Vestnik Tomskogo gosudarstvennogo universiteta. Upravlenie, vychislitel'naya tekhnika i informatika. :31-39
Publikováno v:
Communications in Computer and Information Science ISBN: 9783030553258
The paper presents parallel implementation of a stochastic model of electron and hole transport in a semiconductor. The transfer process is described by a nonlinear system of drift-diffusion-Poisson equations, which is solved by combining different s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07a793acd8aa9d7517b9ad8bcf983d4
https://doi.org/10.1007/978-3-030-55326-5_18
https://doi.org/10.1007/978-3-030-55326-5_18
Publikováno v:
The Journal of Supercomputing. 75:7790-7798
The paper presents a three-dimensional cellular automaton model of electrochemical oxidation of the carbon. The sample of the electro-conductive carbon black “Ketjenblack EC-600JD” consisting of granules of carbon is simulated. The electrochemica
Publikováno v:
Monte Carlo Methods and Applications. 24:79-92
Exact representations for the probability density of the life time and survival probability for a sphere and a disc are derived for a general drift-diffusion-reaction process. Based on these new formulas, we suggest an extremely efficient stochastic
Publikováno v:
Journal of Computational Electronics. 16:325-339
Stochastic models and simulation algorithms for spatially separated reactants in the vicinity of traps were developed. The methods were applied to simulate electron---hole recombination in inhomogeneous semiconductors. Continuous kinetic Monte Carlo
Publikováno v:
Lecture Notes in Computer Science ISBN: 9783030256357
PaCT
PaCT
In this paper a synchronous multi-particle cellular automaton model of diffusion with self-annihilation is developed based on the multi-particle cellular automata suggested previously by other authors. The models of pure diffusion and diffusion with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1f277599eed871002867456fd83342b
https://doi.org/10.1007/978-3-030-25636-4_27
https://doi.org/10.1007/978-3-030-25636-4_27
Publikováno v:
Communications in Computer and Information Science ISBN: 9783030281625
This paper is devoted to supercomputer simulations of transient anisotropic diffusion processes with recombination in GaN semiconductors containing a set of threading dislocations. The random walk on arbitrary parallelepipeds and cubes based on a Mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9b9b106fe8bcfe15272c0ddcd4d3e4
https://doi.org/10.1007/978-3-030-28163-2_19
https://doi.org/10.1007/978-3-030-28163-2_19
Publikováno v:
Journal of Physics: Conference Series. 1680:012044
A random walk based stochastic simulation algorithm for solving a nonlinear system of transient drift-diffusion-Poisson equations for semiconductors with random doping profile is developed. The method is then applied to simulate and analyze the stoch