Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Anastasios Travlos"'
Autor:
Elias Sakellis, Antonis Markopoulos, Christos Tzouvelekis, Manolis Chatzigeorgiou, Anastasios Travlos, Nikos Boukos
Publikováno v:
Fibers, Vol 9, Iss 6, p 38 (2021)
In this paper we report a low cost, simple, electrochemical method for large-area growth of single crystal ZnO nanorods. The method utilizes a metallic zinc foil as the source of the necessary zinc ions for ZnO growth on indium-doped tin oxide (ITO)
Externí odkaz:
https://doaj.org/article/f4a1ba942891488c8bc297308947cb7e
Publikováno v:
IEEE Journal of Photovoltaics. 6:1109-1114
A novel crystalline Si solar cell on n-type Si with a very thin emitter (35-nm thick), formed by Al-induced crystallization (AIC) and doping of an initially amorphous Si (a-Si) layer, is reported. The process for the emitter formation started with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caadcadd43685bda8be1cd069d0bd598
https://doi.org/10.1109/jphotov.2016.2581420
https://doi.org/10.1109/jphotov.2016.2581420
Autor:
Spyridon Ladas, Anastasios Travlos, Stavroula N. Georga, Martha A. Botzakaki, Spyridon Korkos, Christoforos A. Krontiras, S. Kennou, N. Xanthopoulos, Charalampos Drivas
Publikováno v:
Journal of Vacuum Science & Technology A. 38:032402
Metal oxide semiconductor capacitors that incorporate tantalum pentoxide (Ta2O5) thin films as dielectric were fabricated via the atomic layer deposition (ALD) technique and characterized through TEM, XPS, C–V, and I–V measurements. TEM analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2b9b3eb28e8e228fcefe2b10cb6361
https://doi.org/10.1116/1.5134764
https://doi.org/10.1116/1.5134764
Autor:
Nikolaos Nikolaou, Vassilios Ioannou-Sougleridis, Dimitrios Skarlatos, Panagiotis Dimitrakis, Kaupo Kukli, Jaakko Niinistö, Pascal Normand, Anastasios Travlos, Mikko Ritala, Markku Leskelä
Publikováno v:
MRS Proceedings. 1729:15-20
In this work we examine the electrical characteristics and the memory properties of metal-alumina-nitride-oxide-silicon (MANOS) devices as a function of the post deposition annealing conditions. Post deposition annealing of the samples was performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::376f9224aef113e05803d70469768b9c
https://doi.org/10.1557/opl.2015.212
https://doi.org/10.1557/opl.2015.212
Autor:
Lamprini Sygellou, Anastasios Travlos, Stavroula Sfaelou, Vassilios Dracopoulos, Panagiotis Lianos
Publikováno v:
The Journal of Physical Chemistry C. 118:22873-22880
Nanocrystalline titania films deposited on FTO transparent electrodes were sensitized by CdS nanoparticles synthesized in situ by the SILAR method. Three precursor solutions were employed for adsorption of Cd2+ ions: nitrate, sulfate, and acetate. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1662300a9a53ba65b325ee025f4cecc2
https://doi.org/10.1021/jp505787z
https://doi.org/10.1021/jp505787z
Publikováno v:
physica status solidi (b). 249:560-563
ZnO nanorods which have been doped with Zn are studied with photoluminescence spectroscopy at low temperature. Detailed photoluminescence studies reveal that the insertion and extraction of Zn in the nanorods creates zinc related intrinsic defects. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c4506d11815fa13e1752e5dafa48e7
https://doi.org/10.1002/pssb.201147272
https://doi.org/10.1002/pssb.201147272
Autor:
Christos Tsamis, Violetta Gianneta, Martha A. Botzakaki, Stavroula N. Georga, Eleni Makarona, Christoforos A. Krontiras, George Skoulatakis, Anastasios Travlos, N. Xanthopoulos, Spyridon Ladas, Stella Kennou
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:01A120
The influence of deposition temperature on the structural, chemical, and electrical properties of atomic layer deposition (ALD)-Al2O3 thin films is investigated. ALD-Al2O3 films were deposited on p-type Ge substrates at 80, 150, 200, 250, and 300 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40400e4647dc16a314d7142d58ca0c6a
https://doi.org/10.1116/1.5003375
https://doi.org/10.1116/1.5003375
Autor:
Androula G. Nassiopoulou, G.P. Androutsopoulos, K.S. Hatzilyberis, Christos Tsamis, Constantinos E. Salmas, L. Tsoura, Anastasios Travlos
Publikováno v:
IEEE Sensors Journal. 2:89-95
The efficiency of Pd-doped porous silicon (PS) as a catalytic material for hydrogen sensing is studied. Pd is deposited by an electroless process on the internal surface of porous silicon. The catalytic behavior of Pd-doped PS samples is estimated an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::909d9513dc4d5ebb7aa25ce98d911bde
https://doi.org/10.1109/jsen.2002.1000248
https://doi.org/10.1109/jsen.2002.1000248
Publikováno v:
Advanced Materials. 10:483-486
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c74326d88bab312b199569cd362045ee
https://doi.org/10.1002/(sici)1521-4095(199804)10:6<483::aid-adma483>3.0.co
https://doi.org/10.1002/(sici)1521-4095(199804)10:6<483::aid-adma483>3.0.co
Autor:
Stella Kennou, Dimitrios Papadimitriou, A. G. Nassiopoulos, S. Grigoropoulos, Anastasios Travlos, Spyridon Ladas
Publikováno v:
Applied Surface Science. 102:377-380
Silicon nanopillars were produced by using deep-UV lithography, fluorine based highly anisotropic silicon etching and further thinning by high temperature thermal or chemical oxidation and oxide removal. The obtained structures were fully characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908cef1c2d459722efcebcc4123c1b44
https://doi.org/10.1016/0169-4332(96)00081-5
https://doi.org/10.1016/0169-4332(96)00081-5