Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Anas Elbaz"'
Autor:
Binbin Wang, Konstantinos Pantzas, Philippe Boucaud, Vincent Calvo, Jérémie Chrétien, Isabelle Sagnes, Jean-Michel Hartmann, Frederic Boeuf, Sébastien Sauvage, Xavier Checoury, Etienne Herth, Detlev Grützmacher, Dan Buca, Nils von den Driesch, Anas Elbaz, Alexei Chelnokov, Moustafa El Kurdi, Vincent Reboud, Gilles Patriarche, Nicolas Pauc, Emilie Sakat
Publikováno v:
ECS Transactions. 98:61-68
Recent achievements of direct band gap with germanium by alloying with tin or by tensile strain engineering has enabled multiple times demonstration of laser emission in the 2-4µm wavelength range. This fast and promising emergence of CMOS-compatibl
Autor:
Mathieu Bertrand, Philippe Boucaud, Isabelle Sagnes, Sébastien Sauvage, Vincent Reboud, Moustafa El Kurdi, Riazul Arefin, Konstantinos Pantzas, Jérémie Chrétien, Binbin Wang, Anas Elbaz, Gilles Patriarche, Alexei Chelnokov, Lara Casiez, Frederic Boeuf, Etienne Herth, Nicolas Pauc, Razvigor Ossikovski, Emilie Sakat, Antonino Foti, Jean-Michel Hartmann, Xavier Checoury, Vincent Calvo
Publikováno v:
ACS Photonics
ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (10), pp.2713-2722. ⟨10.1021/acsphotonics.0c00708⟩
ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (10), pp.2713-2722. ⟨10.1021/acsphotonics.0c00708⟩
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru
Autor:
Jérémie Chrétien, Gilles Patriarche, Vincent Calvo, Dan Buca, Detlev Grützmacher, Etienne Herth, Philippe Boucaud, Frederic Boeuf, Anas Elbaz, Moustafa El Kurdi, Binbin Wang, Vincent Reboud, Nicolas Pauc, Emilie Sakat, Jean-Michel Hartmann, Xavier Checoury, Nils von den Driesch, Konstantinos Pantzas, Alexei Chelnokov, Isabelle Sagnes
Publikováno v:
Novel In-Plane Semiconductor Lasers XX.
Direct band gap achievements in germanium by alloying with tin or by tensile strain engineering has enabled, in recent years, several demonstrations of laser emission in the 2-5µm wavelength range. This fast and promising emergence of CMOS-compatibl
Autor:
Xavier Checoury, Nicolas Pauc, Emilie Sakat, Isabelle Sagnes, Alexei Chelnokov, K. Pantzas, C. Villebasse, A. Durnez, Vincent Calvo, Frederic Boeuf, M. El Kurdi, Etienne Herth, Gilles Patriarche, Binbin Wang, J.M. Hartmann, Vincent Reboud, Anas Elbaz, Jérémie Chrétien, Lara Casiez
Publikováno v:
2020 IEEE Photonics Conference (IPC).
We fabricated a Ge 0.92 Sn 0.08 micro-disk laser with a lasing threshold as low as 20-30 kW/cm2 at 75 K. A specific etching process was developed to remove the dense array of misfit dislocations from the gain medium. Further surface treatments and pa
Autor:
Jérémie Chrétien, Alexei Chelnokov, Gilles Patriarche, Lara Casiez, Jean-Michel Hartmann, Isabelle Sagnes, Vincent Calvo, Anas Elbaz, Sébastien Sauvage, Nicolas Pauc, Xavier Checoury, Moustafa El Kurdi, K. Pantzas, Vincent Reboud, Riazul Arefin
Publikováno v:
Silicon Photonics XV.
Lasing in bulk GeSn alloys have been reported lately with relatively high thresholds in the range of several hundreds of kW/cm². This can be mainly attributed to high defect densities of high Sn content alloy thick layers grown on relaxed Ge-VS. Ind
Autor:
Razvigor Ossikovski, Philippe Boucaud, Frederic Boeuf, Anas Elbaz, Gilles Patriarche, Nicolas Zerounian, Jean-Michel Hartmann, Xavier Checoury, Moustafa El Kurdi, Konstantinos Pantzas, Zoran Ikonic, Nils von den Driesch, Isabelle Sagnes, Detlev Grützmacher, Sébastien Sauvage, Dan Buca, Etienne Herth, Antonino Foti
Publikováno v:
Nature Photonics
Nature Photonics, Nature Publishing Group, 2020, 14 (6), pp.375-382. ⟨10.1038/s41566-020-0601-5⟩
Nature photonics 14(6), 375 (2020). doi:10.1038/s41566-020-0601-5
Nature Photonics, 2020, 14 (6), pp.375-382. ⟨10.1038/s41566-020-0601-5⟩
Nature Photonics, Nature Publishing Group, 2020, 14 (6), pp.375-382. ⟨10.1038/s41566-020-0601-5⟩
Nature photonics 14(6), 375 (2020). doi:10.1038/s41566-020-0601-5
Nature Photonics, 2020, 14 (6), pp.375-382. ⟨10.1038/s41566-020-0601-5⟩
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1042063ab40bec67bd6dc3f7773f2eb
https://hal.archives-ouvertes.fr/hal-02883866/file/18730_2_merged_1580406357.pdf
https://hal.archives-ouvertes.fr/hal-02883866/file/18730_2_merged_1580406357.pdf
Autor:
Daniela Stange, Etienne Herth, Dan Buca, Denis Rainko, Anas Elbaz, Moustafa El Kurdi, Nils von den Driesch, Zoran Ikonic, Detlev Grützmacher, Philippe Boucaud
Publikováno v:
Scientific Reports
Scientific Reports, Nature Publishing Group, 2019, 9 (1), ⟨10.1038/s41598-018-36837-8⟩
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific reports 9(1), 259 (2019). doi:10.1038/s41598-018-36837-8
Scientific Reports, Nature Publishing Group, 2019, 9 (1), ⟨10.1038/s41598-018-36837-8⟩
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific reports 9(1), 259 (2019). doi:10.1038/s41598-018-36837-8
International audience; In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::462ca9c267fc201b10847f083633b2c0
https://hal.archives-ouvertes.fr/hal-02165210/document
https://hal.archives-ouvertes.fr/hal-02165210/document
Autor:
N. von den Driesch, Zoran Ikonic, Isabelle Sagnes, Anas Elbaz, Detlev Grützmacher, M. El Kurdi, Sébastien Sauvage, Dan Buca, Philippe Boucaud, Xavier Checoury, J.M. Hartmann, Konstantinos Pantzas, Gilles Patriarche, Frederic Boeuf, Etienne Herth
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. T
Autor:
F. Bœuf, Philippe Boucaud, Anas Elbaz, Isabelle Sagnes, M. El Kurdi, Sébastien Sauvage, Xavier Checoury, Abdelhanin Aassime
Publikováno v:
Optics Express
Optics Express, Optical Society of America-OSA Publishing, 2018, ⟨10.1364/OE.26.028376⟩
Optics Express, Optical Society of America-OSA Publishing, 2018, ⟨10.1364/OE.26.028376⟩
International audience; We propose to use a Ge-dielectric-metal stacking to allow one to address both thermal management with the metal as an efficient heat sink and tensile strain engineering with the buried dielectric as a stressor layer. This sche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c8e2ee8175262050ac506983c24b597
https://hal.archives-ouvertes.fr/hal-02106478/document
https://hal.archives-ouvertes.fr/hal-02106478/document
Autor:
Moustafa EL Kurdi, Anas Elbaz, Binbin Wang, Emilie Sakat, Etienne Herth, Gilles Patriarche, Konstantinos Pantzas, Isabelle Sagnes, Sebastien Sauvage, Xavier Checoury, Alexei Chelnokov, Vincent Reboud, Jeremie Chretien, Nicolas Pauc, Vincent Calvo, Frédéric Boeuf, Philippe Boucaud, Nils von den Driesch, Detlev Grützmacher, Jean-Michel Hartmann, Dan Buca
Publikováno v:
ECS Meeting Abstracts. :1709-1709
We present GeSn material engineering to address both defect managements and band structure via tensile strain in laser cavities. We show that GeSnOI technologies allow to address both issues, with drastic reduction of power density thresholds in lasi