Optical characteristics of single wavelength-tunable InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 um

Autor: Cade, N. I., Gotoh, H., Kamada, H., Nakano, H., Anantathanasarn, S., Noetzel, R.

We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550

Externí odkaz: http://arxiv.org/abs/cond-mat/0603845

Stacking, polarization control, and lasing of wavelength tunable (1.55 μm region) InAs/InGaAsP/InP (1 0 0) quantum dots

Autor: Anantathanasarn, S., Nötzel, R., van Veldhoven, P.J., van Otten, F.W.M., Eijkemans, T.J., Barbarin, Y., de Vries, T., Smalbrugge, E., Geluk, E.J., Bente, E.A.J.M., Oei, Y.S., Smit, M.K., Wolter, J.H.

Publikováno v: In Journal of Crystal Growth 2007 298:553-557

Lateral wavelength control of InAs/InGaAsP/InP (100) quantum dots in the 1.55 μm region by selective-area metal organic vapor-phase epitaxy.

Autor: Zhou, D., Anantathanasarn, S., van Veldhoven, P. J., van Otten, F. W. M., Eijkemans, T. J., de Vries, T., Smalbrugge, E., Nötzel, R.

Publikováno v: Journal of Applied Physics; 12/1/2006, Vol. 100 Issue 11, p113512, 4p, 2 Diagrams, 4 Graphs

Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm

Autor: Heck, M.J.R., Tahvili, M.S., Anantathanasarn, S., Smit, M.K., Nötzel, R., Bente, E.A.J.M.

Publikováno v: The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009, 1-1
STARTPAGE=1;ENDPAGE=1;TITLE=The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009

In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 mum. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic vapor-phase epit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::13c3772483099954e4a0e9a3fdb4b080
https://research.tue.nl/nl/publications/5b9e6517-92f9-4726-83dc-7d78c92e9813

Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

Autor: Wang, H., Yuan, J., Anantathanasarn, S., Veldhoven, van, P.J., Vries, de, T., Smalbrugge, E., Geluk, E.J., Bente, E.A.J.M., Oei, Y.S., Smit, M.K., Nötzel, R., Leijtens, X.J.M.

Publikováno v: ECIO'08 Eindhoven-Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, 55-58
STARTPAGE=55;ENDPAGE=58;TITLE=ECIO'08 Eindhoven-Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers

Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold curren

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::289ebdc245813401b597ac7ec5300f00
https://research.tue.nl/nl/publications/7771d147-c7ac-4454-b0c8-3b166bfc3c19