Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ananta R. Acharya"'
Autor:
Ananta R. Acharya
Publikováno v:
Himalayan Physics. 5:22-26
Over the past two decades, group III-nitride semiconductors have become the focus of extremely intensive research due to their unique physical properties and their high potential for use in numerous electronic and optoelectronic devices. To date, alm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8050e9258c4a8486f825fe11e98ca08b
https://doi.org/10.3126/hj.v5i0.12818
https://doi.org/10.3126/hj.v5i0.12818
Autor:
Nikolaus Dietz, Kucukgok Bahadir, Ian T. Ferguson, Sampath Gamage, Andrew G. Melton, Brian D. Thoms, Mustafa Alevli, Ananta R. Acharya, M. K. Indika Senevirathna
Publikováno v:
Applied Surface Science. 268:1-5
The thermal stability of InN layers grown on sapphire by high-pressure chemical vapor deposition has been studied by thermal desorption, atomic force microscopy, X-ray diffraction, and infrared reflection measurements. Desorption products from sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7ad6acdbb3c2a51cf5a7630f3c1b2d
https://doi.org/10.1016/j.apsusc.2012.10.184
https://doi.org/10.1016/j.apsusc.2012.10.184
Autor:
Brian D. Thoms, Ananta R. Acharya
Publikováno v:
Himalayan Physics. 3:6-9
The compositional, structural and optical characterizations of In1-xGaxN epilayers grown by high pressure chemical vapor deposition have been carried out using Auger electron spectroscopy, x-ray diffraction and optical transmission spectroscopy. Auge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c473d1a779cec1d84a8323ac416bac5
https://doi.org/10.3126/hj.v3i0.7267
https://doi.org/10.3126/hj.v3i0.7267
Autor:
Ananta R. Acharya
Publikováno v:
Himalayan Physics. 1:54-57
Not available. Key words: Surface science The Himalayan Physics Vol.1, No.1, May, 2010 Page:54-57 Uploaded Date : 28 July, 2011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae0286e6e738c20b5281bb4b8070522c
https://doi.org/10.3126/hj.v1i0.5178
https://doi.org/10.3126/hj.v1i0.5178
Autor:
Brian D. Thoms, Ananta R. Acharya
Publikováno v:
Himalayan Physics. 2:35-37
Understanding the surface structure and termination of semiconductor thin films during epitaxial growth is critical since it affects the structural, interfacial and electronic properties of epilayers and device structures. The structural properties a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2beec2c8084a56188b7ee48b6d7e627
https://doi.org/10.3126/hj.v2i2.5208
https://doi.org/10.3126/hj.v2i2.5208
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:021401
The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs–Kliewer surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f25bb5f886f728488cb79b25cc24354
https://doi.org/10.1116/1.4901873
https://doi.org/10.1116/1.4901873
Autor:
M. K. Indika Senevirathna, Ian T. Ferguson, Andrew Melton, Nikolaus Dietz, A. G. Unil Perera, Max Buegler, Sampath Gamage, Ananta R. Acharya, Ramazan Atalay, Liqin Su, Axel Hoffmann
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:031511
The influence of super-atmospheric reactor pressures (2.5‐18.5bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire (0001) templates by high-pressure chemical vapor deposition has been studied. The epilayers we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd9bc09ee4a69746a9e542a100cbac5
https://doi.org/10.1116/1.4705727
https://doi.org/10.1116/1.4705727
Autor:
Nikolaus Dietz, Ramazan Atalay, Ramon Collazo, Max Buegler, Brian D. Thoms, J. S. Tweedie, Ananta R. Acharya
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 29:041402
The structural properties and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been characterized using Raman spectroscopy, x-ray diffraction (XRD), and high resolution electron energy loss spectroscop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e22f0d2442ba03c414daf0e02041227
https://doi.org/10.1116/1.3596619
https://doi.org/10.1116/1.3596619