Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Anand V. Sampath"'
Autor:
Jonathan Schuster, Anand V. Sampath, Jeremy L. Smith, Stephen B. Kelley, Gregory A. Garrett, Daniel B. Habersat, Michael A. Derenge, Michael Wraback, Dina M. Bower, Shahid Aslam, Tilak Hewagama
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXXI.
Autor:
K. A. Olver, Jonathan Schuster, Stephen Kelley, Antonio Llopis-Jepsen, Quigui Zhou, Michael Wraback, J. Smith, Anand V. Sampath, Yang Shen, Joe C. Campbell
Publikováno v:
2020 IEEE Photonics Conference (IPC).
Homojunction device architectures are explored through numerical simulations to extend the response of 4H-SiC APDs broadly throughout the UV spectrum. We report on device designs and experimental validation of approaches to improve both surface and b
Autor:
Michael Wraback, F. Nouketcha, Jonathan Schuster, Anand V. Sampath, Stephen Kelley, Hongen Shen, A. Llopis, J. Smith, Joe C. Campbell, Yaojia Chen
Publikováno v:
Applied Physics Letters. 118:221102
The voltage dependent spectral response in the 200–400 nm range was measured in n+-n--p SiC avalanche photodiodes with ultrathin n+ layers varying in the thickness from 60 to 120 nm. The unity gain responsivity in the far ultraviolet (200–250 nm)
Autor:
Anand V. Sampath, Kimberley A. Olver, Stephen Kelley, J. Smith, Jerry B. Cabalo, Eugene Chong, Chelsea R. Haughn, Eric A. DeCuir, Michael Wraback
Publikováno v:
Wide Bandgap Materials, Devices, and Applications IV.
Photodetectors in the ultraviolet spectral range are of great interest for applications such as fluorescence-free Raman spectroscopy and non-line-of-sight optical communications. These applications require single-photon sensitivity, resulting in the
Autor:
John W. Zeller, Gopal G. Pethuraja, Nibir K. Dhar, Adam W. Sood, Roger E. Welser, Anand V. Sampath, Harry Efstathiadis, Ashok K. Sood
Publikováno v:
Infrared Sensors, Devices, and Applications IX.
Infrared (IR) technology plays a critical role in various military and civilian applications including target acquisition, surveillance, night vision, and target tracking. IR sensors and systems operating from the short-wave infrared (SWIR) to long-w
Autor:
Hongen Shen, Anand V. Sampath, Joe C. Campbell, Ryan Enck, Brenda L. VanMil, Yoajia Chen, Gregory A. Garrett, Michael Wraback, Roy B. Chung, Qiugui Zhou, Meredith Reed
Publikováno v:
Materials Science Forum. 858:1206-1209
We report on improvement in the deep ultraviolet (DUV) photoresponse of SiC based detectors through the development of n- AlxGa1-xN / i-p SiC heterojunction photodiodes. Fabricated photodiodes have high external quantum efficiency (EQE), greater than
Autor:
Roy B. Chung, Daniel B. Knorr, Ryan Enck, Gregory A. Garrett, Anand V. Sampath, Meredith Reed
Publikováno v:
ECS Transactions. 72:9-15
III-Nitride/SiC heterostructure devices are a promising approach for improving the performance of SiC devices such as bipolar transistors and avalanche photodiodes. However, the performance of these devices should critically depend on the properties
Publikováno v:
physica status solidi (a). 213:851-855
The reduction of undesirable gas phase reaction between trimethylaluminum and NH3 was achieved by spatially separating the precursors using N2 purge line during AlN growth by metal organic chemical vapor deposition (MOCVD). Under this condition, it w
Publikováno v:
Journal of Crystal Growth. 533:125467
The strain relaxation process of undoped and Si-doped AlxGa1−xN with various compositions and thicknesses on semipolar (2 0 2 ¯ 1) bulk GaN substrate was investigated via the cathodoluminescence (CL) and high-resolution x-ray diffraction (XRD) ana
Autor:
Anand V. Sampath, Andrew H. Jones, Joe C. Campbell, Brenda L. VanMil, Yang Shen, Kimberley A. Olver, Yuan Yuan, Elizabeth J. Opila, Yiwei Peng, Jiyuan Zheng, Cory G. Parker
Publikováno v:
Applied Physics Letters. 115:261101
Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed. The responsivity curves of the Schottky diode are modeled and c