Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Anand B. Puthirath"'
Autor:
Seyed Mohammad Sajadi, Chandra Shekhar Tiwary, Amir Hossein Rahmati, Shannon L. Eichmann, Carl J. Thaemlitz, Devashish Salpekar, Anand B. Puthirath, Peter J. Boul, Muhammad M. Rahman, Ashokkumar Meiyazhagan, Pulickel M. Ajayan
Publikováno v:
iScience, Vol 24, Iss 3, Pp 102174- (2021)
Summary: Cementitious structures exhibit high compression strength but suffer from inherent brittleness. Conversely, nature creates structures using mostly brittle phases that overcome the strength-toughness trade-off, mainly through internalized pac
Externí odkaz:
https://doaj.org/article/f51d895fff794df696731d974bceb905
Autor:
Abhijit Biswas, Rishi Maiti, Frank Lee, Cecilia Y. Chen, Tao Li, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Xiang Zhang, Harikishan Kannan, Tia Gray, Md Abid Shahriar Rahman Saadi, Jacob Elkins, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Yuji Zhao, Alexander L. Gaeta, Manoj Tripathi, Alan Dalton, Pulickel M. Ajayan
Publikováno v:
Nanoscale Horizons. 8:641-651
Hexagonal boron nitride (h-BN) nanosheets are grown at room temperature by pulsed laser deposition that exhibits remarkable functional properties, creating a scenario for “h-BN on demand” under a frugal thermal budget, essential for nanotechnolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b814c92078ed11da04616802915603cd
https://doi.org/10.1039/d2nh00557c
https://doi.org/10.1039/d2nh00557c
Autor:
Chenxi Li, Eliezer F. Oliveira, Xiang Zhang, Abhijit Biswas, Soumyabrata Roy, Anand B. Puthirath, Dimitry A. Ruzmetov, Mahesh R. Neupane, James D. Weil, A. Glen Birdwell, Tony G. Ivanov, Tanguy Terlier, Tia Gray, Harikishan Kannan, Robert Vajtai, Douglas S. Galvao, Pulickel M. Ajayan
Publikováno v:
Chemistry of Materials. 34:7190-7200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18f86b975fd045295d06d53080c291eb
https://doi.org/10.1021/acs.chemmater.2c00711
https://doi.org/10.1021/acs.chemmater.2c00711
Publikováno v:
Carbon. 196:320-326
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::026fb6169ae518620d379a36320df95f
https://doi.org/10.1016/j.carbon.2022.04.080
https://doi.org/10.1016/j.carbon.2022.04.080
Autor:
Drake Austin, Paige Miesle, Deanna Sessions, Michael Motala, David C. Moore, Griffin Beyer, Adam Miesle, Andrew Sarangan, Amritanand Sebastian, Saptarshi Das, Anand B. Puthirath, Xiang Zhang, Jordan Hachtel, Pulickel M. Ajayan, Tyson Back, Peter R. Stevenson, Michael Brothers, Steve S. Kim, Philip Buskohl, Rahul Rao, Christopher Muratore, Nicholas R. Glavin
Publikováno v:
ACS Applied Nano Materials. 5:7549-7561
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f515342b8cf478de67a145a012f3fb5d
https://doi.org/10.1021/acsanm.2c01614
https://doi.org/10.1021/acsanm.2c01614
Autor:
Amruta Raghatate, Fernando D. Cortes Vega, Omar Velazquez Meraz, Kamyar Ahmadi, Nikhil M. Chaudhari, Dhaivat Solanki, Anand B. Puthirath, Nathaly Castaneda, Pulickel M. Ajayan, Jose Martin Herrera Ramirez, Venkatesh Balan, Francisco Carlos Robles Hernández
Publikováno v:
ACS Applied Materials & Interfaces. 14:17837-17848
In this work, we report a facile preparation of biocomposites using a chitosan matrix that is reinforced with morphed graphene in amounts from 1 to 5 wt % C. The composites are processed by milling and conventional sintering. The morphed graphene add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99f40a4caef3b74dea026d3be60110db
https://doi.org/10.1021/acsami.2c02073
https://doi.org/10.1021/acsami.2c02073
Autor:
Abhijit Baburaj, Hemtej Gullapalli, Anand B. Puthirath, Devashish Salpekar, Jarin Joyner, Suppanat Kosolwattana, Robert Vajtai, Babu Ganguli, Pulickel M. Ajayan
Publikováno v:
Journal of Materials Chemistry A. 10:12900-12907
A layer-by-layer fabrication technique for a stacked on-chip supercapacitor operable in a wide range of temperatures (−20 °C to 70 °C) is demonstrated, and the prepared devices show competing performances at room and high temperatures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6872737d65382722421ba30f3f7b091d
https://doi.org/10.1039/d2ta00301e
https://doi.org/10.1039/d2ta00301e
Autor:
Aravind Puthirath Balan, Eliezer F Oliveira, Gelu Costin, Tia Gray, Nithya Chakingal, Abhijit Biswas, Anand B Puthirath
Publikováno v:
Oxford Open Materials Science. 3
Non-van der Waals (n-vdW) 2D materials are gaining popularity due to their exciting confinement-enhanced properties for magnetic, catalytic and optoelectronic applications. The recent discovery of mechanical and liquid exfoliation of n-vdW materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a3c153536ad2fc3ef34c415af9d826
https://doi.org/10.1093/oxfmat/itac020
https://doi.org/10.1093/oxfmat/itac020
Autor:
Douglas S. Galvao, Anand B. Puthirath, James Weil, Tia Gray, A. Glen Birdwell, Abhijit Biswas, Chenxi Li, Tony Ivanov, Xiang Zhang, Seoyun Kong, Mahesh R. Neupane, Robert Vajtai, Harikishan Kannan, Eliezer Fernando Oliveira, Pulickel M. Ajayan
Publikováno v:
Carbon. 182:725-734
It is known that surface terminations contribute significantly to diamond properties. As one of the most commonly studied types, oxygen-terminated diamond surface possesses a positive electron affinity (PEA) and hydrophilicity, making it suitable for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f478a22aaeec468c9c9bb2e1c030a8
https://doi.org/10.1016/j.carbon.2021.06.050
https://doi.org/10.1016/j.carbon.2021.06.050
Autor:
Abhijit Biswas, Mingfei Xu, Kai Fu, Jingan Zhou, Rui Xu, Anand B. Puthirath, Jordan A. Hachtel, Chenxi Li, Sathvik Ajay Iyengar, Harikishan Kannan, Xiang Zhang, Tia Gray, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Dmitry A. Ruzmetov, Pankaj B. Shah, Tony Ivanov, Hanyu Zhu, Yuji Zhao, Pulickel M. Ajayan
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee60cc5cca1a2a90406e5e4661c94f9f
http://arxiv.org/abs/2209.00643
http://arxiv.org/abs/2209.00643
