Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

Autor: Lakhan Bainsla, Bing Zhao, Nilamani Behera, Anamul Md. Hoque, Lars Sjöström, Anna Martinelli, Mahmoud Abdel-Hafiez, Johan Åkerman, Saroj P. Dash

Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)

Abstract The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magne

Externí odkaz: https://doaj.org/article/84b438a482ae42a79539426ce3334b30

Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature

Autor: Dmitrii Khokhriakov, Anamul Md. Hoque, Bogdan Karpiak, Saroj P. Dash

Publikováno v: Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)

The spin-galvanic effect allows for the conversion of non-equilibrium spin density into a charge current. Here, by combining graphene in a van de Waals heterostructure with a topological insulator, the authors demonstrate a large, gate-tunable spin-g

Externí odkaz: https://doaj.org/article/eeeedfdf9bff4be2aba5139183d551eb

Spin-valley coupling and spin-relaxation anisotropy in all-CVD Graphene- MoS2 van der Waals heterostructure

Autor: Anamul Md. Hoque, Vasudev Ramachandra, Antony George, Emad Najafidehaghani, Ziyang Gan, Richa Mitra, Bing Zhao, Dmitrii Khokhriakov, Andrey Turchanin, Samuel Lara-Avila, Sergey Kubatkin, Saroj P. Dash

Publikováno v: Physical Review Materials vol.7(2023)

Two-dimensional (2D) van der Waals (vdW) heterostructures fabricated by combining 2D materials with unique properties into one ultimate unit can offer a plethora of fundamental phenomena and practical applications. Recently, proximity-induced quantum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06b7fc2368de368f176b9bf3fd6f2acb
https://research.chalmers.se/en/publication/535856

Charge-spin conversion in layered semimetal TaTe_{2} and spin injection in van der Waals heterostructures

Autor: Anamul Md. Hoque, Dmitrii Khokhriakov, Bogdan Karpiak, Saroj P. Dash

Publikováno v: Physical Review Research, Vol 2, Iss 3, p 033204 (2020)

A spin-polarized current source using nonmagnetic layered materials is promising for next-generation all-electrical spintronic science and technology. Here we electrically created spin polarization in a layered semimetal TaTe_{2} via the charge-spin

Externí odkaz: https://doaj.org/article/1dfb73d421f04d14bb15329bb1ebb9c7

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Autor: Isabel Harrysson Rodrigues, Andrey Generalov, Anamul Md Hoque, Miika Soikkeli, Anton Murros, Sanna Arpiainen, Andrei Vorobiev

Publikováno v: Harrysson Rodrigues, I, Generalov, A, Soikkeli, M, Murros, A, Arpiainen, S & Vorobiev, A 2022, ' Geometrical magnetoresistance effect and mobility in graphene field-effect transistors ', Applied Physics Letters, vol. 121, 013502 . https://doi.org/10.1063/5.0088564

Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee6224aa43c644debfeb2df0c09fd748
https://cris.vtt.fi/en/publications/d6d098dd-998b-4e68-82b1-2e10a9b58b8f