Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Anahita Haghizadeh"'
Publikováno v:
International Journal of Molecular Sciences, Vol 24, Iss 3, p 2668 (2023)
Understanding complex biological events at the molecular level paves the path to determine mechanistic processes across the timescale necessary for breakthrough discoveries. While various conventional biophysical methods provide some information for
Externí odkaz:
https://doaj.org/article/659574bcfddb4048a8a3510d204eb011
Autor:
Haeyeon Yang, Anahita Haghizadeh
Publikováno v:
MRS Advances. 1:2337-2343
We report observation of narrow nanowires and high density nanodots on the Si(001) surfaces when they are exposed to a single application of interferential irradiation of laser pulses of 7 ns. These nanostructures form selectively depending on interf
Autor:
Haeyeon Yang, Anahita Haghizadeh
Publikováno v:
MRS Advances. 1:2025-2030
We report a study of direct laser fabrication that produces quantum dots with their density higher than the critical density without appearance of large clumps. Atomic force microscopy is used to image GaAs(001) surfaces that are irradiated by high p
Autor:
Anahita Haghizadeh, Haeyeon Yang
Publikováno v:
SPIE Proceedings.
Periodic nanowires are observed from (001) orientation of Si and GaAs when the surfaces are irradiated interferentially by high power laser pulses. These nanowires are self-assembled and can be strain-free while their period is consistent with interf
Autor:
Haeyeon Yang, Anahita Haghizadeh
Publikováno v:
SPIE Proceedings.
We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density
Publikováno v:
Laser-based Micro- and Nanoprocessing IX.
Interferential irradiation of high power laser pulses can produce arrays of periodic nanostructures on surfaces. Patterning Si wafers directly by high power laser pulses indicates that the trench depth is limited to the laser pulse intensity. We pres
Autor:
Haeyeon Yang, Anahita Haghizadeh
Publikováno v:
SPIE Proceedings.
The so-called Stranski-Krastanov (S-K) growth technique is useful to fabricate quantum dots in large quantity. However, it is limited to hetero-epitaxial systems because the S-K growth method requires a lattice mismatch generally larger than 2% such
Autor:
Anahita Haghizadeh, Haeyeon Yang
Publikováno v:
MRS Proceedings. 1748
We present a strain-free, self-assembled GaAs nanodots on GaAs(001) surfaces. Nanodots are studied by atomic force microscopy and field emission scanning electron microscopy. Nanodots self-assemble on the GaAs surface when two laser pulses overlap on
Autor:
Anahita Haghizadeh, Haeyeon Yang
Publikováno v:
MRS Proceedings. 1748
We study how the period of transient thermal gradient impacts on morphologies of nanostructures on the Si(001) surface. Strain-free, self-assembled nanodots as well as periodic nanowires are fabricated directly on Si(001) surfaces by applying high po
Autor:
Anahita Haghizadeh, Haeyeon Yang
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:031202
The authors report the fabrication of planar nanowires narrower than 30 nm and longer than a few micrometers, directly on the GaAs(001) surfaces when thermal gratings are created on the surface. The thermal grating is due to the temperature rise that