Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Ana María Llois"'
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 32(23)
Motivated by the recent synthesis of a PtSe
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025319-025319-4 (2021)
AIP Advances
AIP Advances
By means of ab initio calculations, we study the effect of charge transfer and symmetry mismatch on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ (001). We find that the interplay of these degrees
Han et al. have recently published an article on the ordering of oxygen vacancies and electron localization in bulk CeO 2 using density functional theory (DFT) with the Heyd−Scuseria−Ernzerhof (HSE06) functional. On the basis of their results, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7566a0babe589793842cf43798b5a647
https://pubs.acs.org/doi/10.1021/acs.jpcc.7b01800
https://pubs.acs.org/doi/10.1021/acs.jpcc.7b01800
Autor:
Massimiliano Marangolo, Mahmoud Eddrief, Gilles Patriarche, Maurizio Sacchi, Dominique Demaille, Ana María Llois, C. Helman, Victor H. Etgens
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2013, 13 (10), pp.4279-4284. ⟨10.1021/cg400576m⟩
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Consejo Nacional de Investigaciones Científicas y Técnicas
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Crystal Growth & Design, 2013, 13 (10), pp.4279-4284. ⟨10.1021/cg400576m⟩
Crystal Growth & Design, American Chemical Society, 2013, 13 (10), pp.4279-4284. ⟨10.1021/cg400576m⟩
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Crystal Growth & Design, 2013, 13 (10), pp.4279-4284. ⟨10.1021/cg400576m⟩
The molecular beam epitaxy growth of Fe on MnAs/GaAs(001) leads to the formation of an epitaxial FeMnAs phase at the Fe/MnAs interface. The investigation of the structure by high angle annular dark field imaging in a scanning transmission electron mi
Autor:
Ana María Llois, C. Helman
Publikováno v:
IEEE Transactions on Magnetics. 49:4675-4678
Mechanical stress due to a misfit between a thin film and its substrate induces strains which can strongly modify the unstrained thin film properties. One good and interesting example to study strain effects is given by ultrathin films of Fe epitaxia
Publikováno v:
IEEE Transactions on Magnetics. 49:4538-4541
Transition metal dichalcogenides are well known for their laminar structure, similar to that of graphite. The bulk structure of many of them has been the subject of several studies during the last 30 years, due to their many potential technological a
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
In the present work, we study the magnetic properties of the NbS2 monolayer by first-principles calculations. The transition metal dichalcogenides (TMDCs) are a family of laminar materials presenting exciting properties such as charge density waves (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3e677b0abc159629578dfee9431a6f7
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.094434
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.094434
Publikováno v:
Physica B: Condensed Matter. 407:3263-3266
We calculate the conductance through a quantum dot weakly coupled to metallic contacts by means of the Keldysh out of equilibrium formalism. We model the quantum dot with the SU(2) Anderson model and consider the limit of infinite Coulomb repulsion.
Publikováno v:
Physica B: Condensed Matter. 404:2822-2825
We investigate the electronic and magnetic properties of linear chains of 3d atoms, namely Cr and Mn, supported on a monolayer of copper nitride on Cu(1 0 0) using first principles LSDA calculations. Based on these results, we also calculate the intr
Publikováno v:
Physica B: Condensed Matter. 404:2841-2844
We investigate the electronic structure of Fe/ZnSe/Fe magnetic tunnel junctions for which interdiffusion and reconstruction at the interfaces are considered. Taking into account the ab initio potential profile throughout the different layers of the s