Silicon superconducting quantum interference device

Autor: Klaus Hasselbach, Dominique Débarre, J. E. Duvauchelle, Christophe Marcenat, John R. Kirtley, F. Chiodi, Anaïs Francheteau, F. Lefloch

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩
Applied Physics Letters, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩

We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser

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https://hal.archives-ouvertes.fr/hal-01590246