Zobrazeno 1 - 10
of 13 010
pro vyhledávání: '"An-Chen Liu"'
Publikováno v:
Micromachines, Vol 15, Iss 4, p 517 (2024)
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the max
Externí odkaz:
https://doaj.org/article/41359acb07fa461a8455ab71c1169c8a
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1937 (2023)
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal materi
Externí odkaz:
https://doaj.org/article/9d1081388fd741dc9304516866f20cf6
Autor:
Chen, Liu, Korsch, Alexander Rolf, Kersul, Cauê Moreno, Benevides, Rodrigo, Yu, Yong, Alegre, Thiago P. Mayer, Gröblacher, Simon
Single-photon sources are of fundamental importance to emergent quantum technologies. Nano-structured optomechanical crystals provide an attractive platform for single photon generation due to their unique engineering freedom and compatibility with o
Externí odkaz:
http://arxiv.org/abs/2410.10947
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1582 (2023)
A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and lo
Externí odkaz:
https://doaj.org/article/3c0c8ce4e33b4ee1ac907ea15cc57ba1
Publikováno v:
Micromachines, Vol 14, Iss 4, p 764 (2023)
In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, large
Externí odkaz:
https://doaj.org/article/1c96ed129b9642d58cfb0b1ef8304432
The indirect nonlinear interactions between toroidal Alfv\'en eigenmode (TAE) and ion temperature gradient mode (ITG) are investigated using nonlinear gyrokinetic theory and ballooning mode formalism. More specifically, the local nonlinear ITG mode e
Externí odkaz:
http://arxiv.org/abs/2408.15782
The self-consistent nonlinear interaction of drift wave (DW) and zonal flow (ZF) is investigated using nonlinear gyrokinetic theory, with both spontaneous excitation and beat-driven of ZF by DW treated on the same footing. DW solitons are formed in t
Externí odkaz:
http://arxiv.org/abs/2408.05983
Effects of plasma nonuniformity on zero frequency zonal structure (ZFZS) excitation by drift Alfven wave (DAW) instabilities in toroidal plasmas are investigated using nonlinear gyrokinetic theory. The governing equations describing nonlinear interac
Externí odkaz:
http://arxiv.org/abs/2408.00324
Autor:
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh
Publikováno v:
Micromachines, Vol 14, Iss 3, p 576 (2023)
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact
Externí odkaz:
https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef
Autor:
Zhao, Yi-Ning, Chen, Lin-Shan, Chen, Liu-Ya, Kong, Lingxin, Wang, Chong, Ren, Cheng, Zhang, Su-Heng, Cao, De-Zhong
A scenario of ghost imaging with hybrid transform approach is proposed by integrating Hadamard, discrete cosine, and Haar matrices. The measurement matrix is formed by the Kronecker product of the two different transform matrices. The image informati
Externí odkaz:
http://arxiv.org/abs/2405.03729