Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Aníbal Pacheco‐Sanchez"'
Autor:
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis, Aníbal Pacheco‐Sanchez, Ferney A. Chaves, David Jiménez
The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c56d331e10f75bf421dd3a6b13afdefa
https://ddd.uab.cat/record/268168
https://ddd.uab.cat/record/268168
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 658-664 (2023)
A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance param
Externí odkaz:
https://doaj.org/article/2f0c6d8b4850468196665a248eb149e0
Publikováno v:
Applied Sciences, Vol 13, Iss 12, p 7201 (2023)
In this study, a process is developed for the fabrication of buried top-gated graphene transistors with Al2O3 as a gate dielectric, yielding devices that can be suitable for not only flexible electronics but also laser-induced graphene (LIG)-based te
Externí odkaz:
https://doaj.org/article/39425584a3dc4aa9b1430a2203ad38be