Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Amyn Poonawala"'
Publikováno v:
Optical Microlithography XXXIV.
In this paper, we will present a machine learning solution targeted for memory customers including both assist feature and main feature mask synthesis. In a previous paper, we demonstrated machine learning ILT solutions for the creation of assist fea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60aee5ff7588af3ea24ed35225373077
https://doi.org/10.1117/12.2587107
https://doi.org/10.1117/12.2587107
Publikováno v:
Optical Microlithography XXXIII.
Since its introduction at Luminescent Technologies and continued development at Synopsys, Inverse Lithography Technology (ILT) has delivered industry leading quality of results (QOR) for mask synthesis designs. With the advent of powerful, widely dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5760697060d47df99eeaa2351ecd424e
https://doi.org/10.1117/12.2551425
https://doi.org/10.1117/12.2551425
Autor:
Guangming Xiao, Amyn Poonawala, Wolfgang Hoppe, Bernd Kuechler, Kosta Selinidis, Howard Cai, Kyle Braam, Vitaly Domnenko
Publikováno v:
Optical Microlithography XXXI.
Despite the large difficulties involved in extending 193i multiple patterning and the slow ramp of EUV lithography to full manufacturing readiness, the pace of development for new technology node variations has been accelerating. Multiple new variati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a98d5dc003b85d4554ffecd5583133df
https://doi.org/10.1117/12.2299375
https://doi.org/10.1117/12.2299375
Publikováno v:
SPIE Proceedings.
Model-based optical proximity correction (MB-OPC) has been widely applied in advanced lithography processes today. As k1 factor decreases and circuit design complexity increases, various advanced OPC modeling techniques have been employed to better s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1f2c91a027feb717cd0559bd2d2ed5
https://doi.org/10.1117/12.2258088
https://doi.org/10.1117/12.2258088
Autor:
Peyman Milanfar, Amyn Poonawala
Publikováno v:
Microelectronic Engineering. 84:2837-2852
Inverse lithography attempts to synthesize the input mask which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. In this article, we extend our earlier framework for image prewarping to solve the mask desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e2b78e6e5af90be63019c2a517be34f
https://doi.org/10.1016/j.mee.2007.02.005
https://doi.org/10.1016/j.mee.2007.02.005
Autor:
Peyman Milanfar, Amyn Poonawala
Publikováno v:
IEEE Transactions on Image Processing. 16:774-788
In all imaging systems, the forward process introduces undesirable effects that cause the output signal to be a distorted version of the input. A typical example is of course the blur introduced by the aperture. When the input to such systems can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49530c3962e789b91b28111166855972
https://doi.org/10.1109/tip.2006.891332
https://doi.org/10.1109/tip.2006.891332
Publikováno v:
Journal of Mathematical Imaging and Vision. 24:229-244
We address the problem of reconstructing a planar shape from a finite number of noisy measurements of its support function or its diameter function. New linear and non-linear algorithms are proposed, based on the parametrization of the shape by its E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::111fb6a21eb386af1359867d74378087
https://doi.org/10.1007/s10851-005-3625-z
https://doi.org/10.1007/s10851-005-3625-z
Autor:
Hans-Jürgen Stock, Kunal N. Taravade, William Stanton, Thomas Klimpel, Amyn Poonawala, Thomas Mülders, Vitaliy Domnenko, Bernd Küchler
Publikováno v:
SPIE Proceedings.
A new method for simultaneous Source-Mask Optimization (SMO) is presented. In order to produce optimum imaging fidelity with respect to exposure lattitude, depth of focus (DoF) and mask error enhancement factor (MEEF) the presented method aims to lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b09e47252180eab8bf518d0b1ce5727
https://doi.org/10.1117/12.865965
https://doi.org/10.1117/12.865965
Publikováno v:
SPIE Proceedings.
Model-based assist-feature (MBAF) placement has been shown to have considerable lithographic benefits vs. rule-based assist-feature (RBAF) placement for advanced technology-node requirements. For very strong off-axis illumination, MBAF-placement meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::677c5a29a308e794903913562ec6f84b
https://doi.org/10.1117/12.848443
https://doi.org/10.1117/12.848443
Publikováno v:
SPIE Proceedings.
With the delay in commercialization of EUV and the abandonment of high index immersion, Fabs are trying to put half nodes into production by pushing the k1 factor of the existing scanner tool base as low as possible. A main technique for lowering lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2758b49b52cdf9bf6142dd2da2d5cafb
https://doi.org/10.1117/12.847977
https://doi.org/10.1117/12.847977