Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Amy Y. X. Zhu"'
Autor:
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensi
Externí odkaz:
https://doaj.org/article/15e6163bb86d475396cc295da24b899b
Autor:
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, C. W. Liu
Publikováno v:
Physical Review B. 107
Autor:
Yisu Remy Wang, Dan Grossman, Max Willsey, Chandrakana Nandi, Zachary Tatlock, Adam Anderson, Brett Saiki, Amy Y. X. Zhu, Adriana Schulz
Many compilers, synthesizers, and theorem provers rely on rewrite rules to simplify expressions or prove equivalences. Developing rewrite rules can be difficult: rules may be subtly incorrect, profitable rules are easy to miss, and rulesets must be r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac624ad4eae71a99bdc77128a43ecfe7
http://arxiv.org/abs/2108.10436
http://arxiv.org/abs/2108.10436
Autor:
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05f6c2a1da04880826fedd467ffdb76c
http://arxiv.org/abs/2106.05927
http://arxiv.org/abs/2106.05927
Autor:
V. T. Dolgopolov, S. V. Kravchenko, A. A. Shashkin, M. Yu. Melnikov, Vladimir Dobrosavljevic, Chieh-I Liu, S.-H. Huang, Amy Y. X. Zhu, M. M. Radonjić
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82380f8e62ff3888ddacccb182cf28c6
http://arxiv.org/abs/2004.14968
http://arxiv.org/abs/2004.14968
Autor:
S.-H. Huang, Amy Y. X. Zhu, M. Yu. Melnikov, A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov, Chee-Wee Liu
Publikováno v:
Physical Review B. 101
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron sy
Autor:
S. V. Kravchenko, Amy Y. X. Zhu, A. A. Shashkin, Chee-Wee Liu, M. Yu. Melnikov, S.-H. Huang, V. T. Dolgopolov
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8adac3a3a5042839944367ad2cc9988
http://arxiv.org/abs/1808.10063
http://arxiv.org/abs/1808.10063