Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Amy Romero"'
Autor:
Sei Hyung Ryu, Scott Allen, Edward Van Brunt, John W. Palmour, Jae Hyung Park, Daniel J. Lichtenwalner, Donald A. Gajewski, Shadi Sabri, Philipp Steinmann, Brett Hull, Satyaki Ganguly, Amy Romero, Jim Richmond
Publikováno v:
Materials Science Forum. 1004:992-997
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation. During switching conditions, unexpected transient events may occur which force devices into avalanche or short circuit con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5d2be04e73ae0418c42840d57c2ed4
https://doi.org/10.4028/www.scientific.net/msf.1004.992
https://doi.org/10.4028/www.scientific.net/msf.1004.992
Autor:
Scott Allen, Philipp Steinmann, Daniel J. Lichtenwalner, Donald A. Gajewski, Amy Romero, Edward Van Brunt, Brett Hull, Sei-Hyung Ryu, Shadi Sabri, Satyaki Ganguly, John W. Palmour
Publikováno v:
2020 IEEE International Integrated Reliability Workshop (IIRW).
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation. During switching conditions, unexpected transient events may occur which force devices into avalanche or short circuit con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18dce82f47eaf7012c53bc603412714
https://doi.org/10.1109/iirw49815.2020.9312873
https://doi.org/10.1109/iirw49815.2020.9312873
Autor:
Christina DiMarino, Amy Romero
Publikováno v:
IEEE Power Electronics Magazine. 4:97-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e7bd97b46f03a64567919af277ab57
https://doi.org/10.1109/mpel.2017.2704667
https://doi.org/10.1109/mpel.2017.2704667
Publikováno v:
IEEE Power Electronics Magazine. 4:36-45
For decades, silicon (Si)-based semiconductors were the solution for power electronics applications due to their mature technology and low manufacturing costs. However, such semiconductors seem to be approaching their limits of operation in terms of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da01eb645c35e9ad3f808ec09c0feb8
https://doi.org/10.1109/mpel.2017.2692309
https://doi.org/10.1109/mpel.2017.2692309
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper describes 1.2 kV, 6.5 mΩ, half-bridge SiC MOSFET power module design, fabrication and initial testing exploring the benefits of flexible PCB gate loop connection and symmetrically patterned direct bonded copper (DBC). Paralleling power d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ced9b6218ec6831f75845ba2f5db2fe
https://doi.org/10.1109/ecce.2019.8912641
https://doi.org/10.1109/ecce.2019.8912641
Publikováno v:
2019 IEEE Applied Power Electronics Conference and Exposition (APEC).
The Power MOSFET Tool through Synopsys® Saber® can estimate static and dynamic behaviors of devices given measured static and dynamic characteristic curves. Model parameters are made accessible for behavior simulation and design optimization even i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3dd777f279b1112c3f9784a1a3ad274
https://doi.org/10.1109/apec.2019.8721880
https://doi.org/10.1109/apec.2019.8721880
Publikováno v:
2019 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper describes the design, packaging and test setup of a compact, low inductance, 1200 V, 6.5 mΩ half-bridge power module. In the design of this power module, the use of new techniques advances the properties of a SiC power module. The design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a262827caf0f21f561e518335c88ffd
https://doi.org/10.1109/apec.2019.8722138
https://doi.org/10.1109/apec.2019.8722138
Autor:
Rolando Burgos, Amy Romero
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
As power electronics systems strive for higher power density, SiC MOSFET technology is meeting these goals by creating smaller devices with lower losses (and therefore higher current densities). As these advancements are made, failure mode expectatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452114d0cab9b2f7f88e4838e3c9ff4f
https://doi.org/10.1109/ecce.2018.8557500
https://doi.org/10.1109/ecce.2018.8557500
Publikováno v:
2017 IEEE Energy Conversion Congress and Exposition (ECCE).
Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d64ae141263911bef18480478976e8
https://doi.org/10.1109/ecce.2017.8095812
https://doi.org/10.1109/ecce.2017.8095812