Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Amy E. Zweber"'
Autor:
Mark Lawliss, Amy E. Zweber, Yurong Ying, Bradley Morgenfeld, Jean Raymond Fakhoury, Tom Faure, Christopher Magg
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, we demonstrate the use of Aerial Imaging Metrology System (AIMS™) during mask fabrication to deliver duplicate photomasks with matching iso-dense bias (IDB) to a reference photomask. The photomask IDB trend based on AIMS™ feedback
Autor:
Yusuke Toda, Takeshi Isogawa, Michael Fahrenkopf, Yoshifumi Sakamoto, Richard Wistrom, Masayuki Kagawa, Jed H. Rankin, Amy E. Zweber, Thomas Faure, Steven Nash
Publikováno v:
SPIE Proceedings.
Over time mask makers have been driven to low sensitivity e-beam resist materials to meet lithographic patterning needs. For 7-nm logic node, resolution enhancement techniques continue to evolve bringing more complexity on mask and additional mask bu
Autor:
Richard Wistrom, Masayuki Kagawa, Kazuhiro Nishikawa, Yoshifumi Sakamoto, Takeshi Isogawa, Yusuke Toda, Mark Lawliss, Kazunori Seki, Yukio Inazuki, Lin Hu, Ramya Viswanathan, Thomas Faure, Yongan Xu, Amy E. Zweber, Karen D. Badger, Granger Lobb
Publikováno v:
SPIE Proceedings.
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole p
Autor:
Linda K. Sundberg, Martha I. Sanchez, Yoshio Kawai, Amy E. Zweber, T. Senna, Keiichi Masunaga, Joseph L. Malenfant, I. Yoshida, Luisa D. Bozano, R. Bowley, Satoshi Watanabe, R. Sooriyakumaran, T. Isogawa, Y. Sakamoto, T. Komizo, Tom Faure, Steven C. Nash, M. Tanabe, M. Kagawa
Publikováno v:
SPIE Proceedings.
The critical layer masks for 14 nm and 10 nm logic nodes are typically bright field, and the key features are opaque structures on the mask. In order to meet the tight critical dimension (CD) requirements on these opaque features the use of a high qu
Autor:
Charles A. Jones, James B. McClain, Ruben G. Carbonell, Joseph M. DeSimone, James P. DeYoung, Amy E. Zweber
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 29:97-109
Condensed carbon dioxide (CO2) has emerged as a leading enabler of advanced semiconductor manufacturing processes. By exploiting the physical properties of CO2, some of the current challenges encountered in microelectronics processing related to shri
Autor:
T. Isogawa, S. Barai, K. Ballman, Steven C. Nash, Tom Faure, Jed H. Rankin, Daniel J. Dechene, Y. Negishi, Anne E. McGuire, T. Senna, Amy E. Zweber, Michael S. Hibbs, M. Miller
Publikováno v:
SPIE Proceedings.
At the 14 nm logic node, significant lithographic changes relative to previous technologies are needed to resolve smaller features with increased fragmentation in mask design and increased use of sub-resolution assist features. Extending the applicat
Autor:
T. Komizo, Amy E. Zweber, I. Yoshida, Linda K. Sundberg, T. Senna, R. Sooriyakumaran, Luisa D. Bozano, M. Tanabe, Martha I. Sanchez, Daniel P. Sanders
Publikováno v:
SPIE Proceedings.
Resist materials rely on solubility differences between the exposed and unexposed areas to create the desired image. Most negative-tone resists achieve the solubility difference by crosslinking the exposed area causing it to be insoluble in developer
Autor:
Gregory McIntyre, Yoshiyuki Negishi, Zhengqing John Qi, Satoshi Akutagawa, Amy E. Zweber, Tasuku Senna, Emily Gallagher, Toshio Konishi
Publikováno v:
SPIE Proceedings.
The line-edge roughness (LER) of a photomask image has a measurable impact on the corresponding printed wafer LER. This impact increases as wafer exposures move from 193nm DUV to 13.5nm EUV wavelengths since the imaging tool is a low-pass filter with
Autor:
Amy E. Zweber, Tom Faure, Tasuku Senna, Anne E. McGuire, Yuki Fujita, Takahiro Kaneko, Yoshiyuki Negishi, Masahito Tanabe, Luisa D. Bozano, Linda K. Sundberg, Ratnam Sooriyakumaran, Martha I. Sanchez
Publikováno v:
SPIE Proceedings.
In order to meet the challenging patterning requirements of the 14 nm node, the semiconductor industry has implemented use of negative tone develop (NTD) and other tone inversion techniques on wafer to enable use of bright field masks which provide a
Autor:
Amy E. Zweber, P. J. Brock, Martha I. Sanchez, Yoshiyuki Negishi, Toshio Konishi, Anne E. McGuire, Tasuku Senna, Emily Gallagher, Hoa Truong, Luisa D. Bozano
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) mask fabrication faces many unique challenges, including more stringent line edge roughness (LER) requirements. EUV mask absorber LER will need to be reduced to reliably meet the 2013 International Roadmap for Semiconductors