Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Amulya Athayde"'
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
Autor:
Weien Huang, Kai Dong Xu, Guang Yaw Hwang, Autumn Yeh, Mark Lin, David Lou, Gowri Kamarthy, S.F. Tzou, J.H. Liao, Eason Chen, Amulya Athayde
Publikováno v:
Solid State Phenomena. 187:57-60
Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79f7254bb0a431390fc895c2772a0795
https://doi.org/10.4028/www.scientific.net/ssp.187.57
https://doi.org/10.4028/www.scientific.net/ssp.187.57
Publikováno v:
ECS Meeting Abstracts. :1676-1676
Current 2D NAND scaling is approaching technology limitation in both lithography and device performance arena. To address the lithography challenges at the 1x nodes and the well-known scaling issues associated with planar NAND, 3D flash technology is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b94d3a69bbde0c871df633236ef9824
https://doi.org/10.1149/ma2014-02/32/1676
https://doi.org/10.1149/ma2014-02/32/1676