Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Amritesh Rai"'
Autor:
Ke Chen, Anupam Roy, Amritesh Rai, Hema C. P. Movva, Xianghai Meng, Feng He, Sanjay K. Banerjee, Yaguo Wang
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 056103-056103-7 (2018)
Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectrosc
Externí odkaz:
https://doaj.org/article/4e2980ed91d34ab6a1b2458bd009df0c
Autor:
Amritesh Rai, Hema C. P. Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury, Sanjay K. Banerjee
Publikováno v:
Crystals, Vol 8, Iss 8, p 316 (2018)
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device application
Externí odkaz:
https://doaj.org/article/deec66e3818b454380b7e78b945edd60
Autor:
Amritesh Rai, Anupam Roy, Amithraj Valsaraj, Sayema Chowdhury, Deepyanti Taneja, Yaguo Wang, Leonard Frank Register, Sanjay K. Banerjee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2345eec2fac9a76370233dee47d46721
https://doi.org/10.1016/b978-0-12-820292-0.00017-3
https://doi.org/10.1016/b978-0-12-820292-0.00017-3
Autor:
Rafik Addou, Vitaliy Babenko, Sanjay K. Banerjee, Sayema Chowdhury, Rebekah Chua, Luigi Colombo, Paola De Padova, Yi Du, David B. Geohegan, Mahdi Ghorbani-Asl, Stephan Hofmann, Yu Li Huang, Mieczysław Jałochowski, Hannu-Pekka Komsa, Azimkhan Kozhakhmetov, Arkady V. Krasheninnikov, Mariusz Krawiec, Silvan Kretschmer, Yu-Chuan Lin, Chenze Liu, Ruitao Lv, Stephen McDonnell, Bruno Olivieri, Carlo Ottaviani, Alex A. Puretzky, Claudio Quaresima, Amritesh Rai, Leonard Frank Register, Petra Reinke, Joshua A. Robinson, Anupam Roy, Nicholas A. Simonson, Deepyanti Taneja, Andrew Thye Shen Wee, Riccardo Torsi, Amithraj Valsaraj, Yuchi Wan, Yaguo Wang, Kai Xiao, Leping Yang, Yiling Yu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f216b226089f858d837622110ee039
https://doi.org/10.1016/b978-0-12-820292-0.00005-7
https://doi.org/10.1016/b978-0-12-820292-0.00005-7
Autor:
Xinyu Liu, Amritesh Rai, Chenxi Zhang, Suresh Vishwanath, Kyeongjae Cho, Jeongwoon Hwang, Malgorzata Dobrowolska, Iljo Kwak, Sanjay K. Banerjee, Andrew C. Kummel, Huili Grace Xing, Steven Wolf, Jun Hong Park, Jacek K. Furdyna
Publikováno v:
ACS Nano. 13:7545-7555
Chemical functionalization is demonstrated to enhance the p-type electrical performance of two-dimensional (2D) layered tungsten diselenide (WSe2) field-effect transistors (FETs) using a one-step dipping process in an aqueous solution of ammonium sul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4455165adb2a4f3fa6e963fc44e66013
https://doi.org/10.1021/acsnano.8b09351
https://doi.org/10.1021/acsnano.8b09351
Autor:
Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Kyounghwan Kim, Amritesh Rai, Daniel A. Sanchez, Jiamin Quan, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Travis Autry, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K. Banerjee, Kevin L. Silverman, Suenne Kim, Emanuel Tutuc, Li Yang, Allan H. MacDonald, Xiaoqin Li
Publikováno v:
Nature. 567:71-75
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moire superlattice. While it is widely recognized that a moire superlattice can modulate the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66da409467f5cdd2f130c0c5fcda596e
https://doi.org/10.1038/s41586-019-0975-z
https://doi.org/10.1038/s41586-019-0975-z
Autor:
Amritesh Rai, Rik Dey, Samaresh Guchhait, Sarmita Majumder, Ryan Schalip, Tanmoy Pramanik, Anupam Roy, Sanjay K. Banerjee
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b89fef3d30f24ef44e5c3a243672b16
Autor:
Yongjian, Zhou, Nikhilesh, Maity, Amritesh, Rai, Rinkle, Juneja, Xianghai, Meng, Anupam, Roy, Yanyao, Zhang, Xiaochuan, Xu, Jung-Fu, Lin, Sanjay K, Banerjee, Abhishek K, Singh, Yaguo, Wang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 32(22)
Two distinct stacking orders in ReS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::32fe588bebb7e95e50be2075fdf75464
https://pubmed.ncbi.nlm.nih.gov/32329148
https://pubmed.ncbi.nlm.nih.gov/32329148
Autor:
Hema C. P. Movva, Cheng-Chih Hsieh, Anupam Roy, Tanmoy Pramanik, Samaresh Guchhait, Sanjay K. Banerjee, Amritesh Rai, Rik Dey
Publikováno v:
Journal of Magnetism and Magnetic Materials. 437:72-77
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong secon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83fc381618fbd36715e97cc5d6aa1a1a
https://doi.org/10.1016/j.jmmm.2017.04.039
https://doi.org/10.1016/j.jmmm.2017.04.039
Autor:
Takashi Taniguchi, Amritesh Rai, Hema C. P. Movva, Emanuel Tutuc, Stefano Larentis, Babak Fallahazad, Kenji Watanabe, Sanjay K. Banerjee, Kyounghwan Kim
Publikováno v:
ACS Nano. 11:4832-4839
Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f68c2c9f0fc8945cdd806323041ca5b
https://doi.org/10.1021/acsnano.7b01306
https://doi.org/10.1021/acsnano.7b01306