Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Amritanand Sebastian"'
Autor:
Amritanand Sebastian, Rahul Pendurthi, Azimkhan Kozhakhmetov, Nicholas Trainor, Joshua A. Robinson, Joan M. Redwing, Saptarshi Das
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Designing efficient Bayesian neural networks remains a challenge. Here, the authors use the cycle variation in the programming of the 2D memtransistors to achieve Gaussian random number generator-based synapses, and combine it with the complementary
Externí odkaz:
https://doaj.org/article/b1361d7ab60f4534ba22fdf3f2315b47
Autor:
Shiva Subbulakshmi Radhakrishnan, Amritanand Sebastian, Aaryan Oberoi, Sarbashis Das, Saptarshi Das
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
The implementation of spiking neural network in future neuromorphic hardware requires hardware encoder analogous to the sensory neurons. The authors show a biomimetic dual-gated MoS2 field effect transistor capable of encoding analog signals into sto
Externí odkaz:
https://doaj.org/article/191e7b505ac84fff97ee5312ce3dbac1
Autor:
Amritanand Sebastian, Rahul Pendurthi, Tanushree H. Choudhury, Joan M. Redwing, Saptarshi Das
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-12 (2021)
Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integra
Externí odkaz:
https://doaj.org/article/54929cb5317e408495cdba1f5f85769e
Autor:
Akhil Dodda, Aaryan Oberoi, Amritanand Sebastian, Tanushree H. Choudhury, Joan M. Redwing, Saptarshi Das
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Here, the authors take advantage of stochastic resonance in a photodetector based on monolayer MoS2 for measuring otherwise undetectable, ultra-low-intensity, subthreshold optical signals from a distant light emitting diode in the presence of a finit
Externí odkaz:
https://doaj.org/article/92c8b824cad84721ad66e7ae90b0417e
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-11 (2019)
Designing large-scale hardware implementation of Probabilistic Neural Network for energy efficient neuromorphic computing systems remains a challenge. Here, the authors propose an hardware design based on MoS2/BP heterostructures as reconfigurable Ga
Externí odkaz:
https://doaj.org/article/ad20e8a07db343ebacc0a4a6dcfc367e
Autor:
Drake Austin, Paige Miesle, Deanna Sessions, Michael Motala, David C. Moore, Griffin Beyer, Adam Miesle, Andrew Sarangan, Amritanand Sebastian, Saptarshi Das, Anand B. Puthirath, Xiang Zhang, Jordan Hachtel, Pulickel M. Ajayan, Tyson Back, Peter R. Stevenson, Michael Brothers, Steve S. Kim, Philip Buskohl, Rahul Rao, Christopher Muratore, Nicholas R. Glavin
Publikováno v:
ACS Applied Nano Materials. 5:7549-7561
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f515342b8cf478de67a145a012f3fb5d
https://doi.org/10.1021/acsanm.2c01614
https://doi.org/10.1021/acsanm.2c01614
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efd31326d4bd302880953d648ed9a1c
https://doi.org/10.1038/s41928-021-00670-1
https://doi.org/10.1038/s41928-021-00670-1
Autor:
Nicholas Trainor, Mikhail Chubarov, Tanushree H. Choudhury, Saptarshi Das, Anushka Bansal, Joan M. Redwing, Amritanand Sebastian, Tianyi Zhang, Saiphaneendra Bachu, Nasim Alem, Mauricio Terrones, Haoyue Zhu, Danielle Reifsnyder Hickey
Publikováno v:
ACS Nano. 15:2532-2541
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as WS2 requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same crystallogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef90539134a7440d01e43349773f055
https://doi.org/10.1021/acsnano.0c06750
https://doi.org/10.1021/acsnano.0c06750
Autor:
Tanushree H. Choudhury, Rahul Pendurthi, Saptarshi Das, Amritanand Sebastian, Joan M. Redwing
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-12 (2021)
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c53d87b51d864230231e02d856d63e
https://doaj.org/article/54929cb5317e408495cdba1f5f85769e
https://doaj.org/article/54929cb5317e408495cdba1f5f85769e
Autor:
Shiva Subbulakshmi Radhakrishnan, Shakya Chakrabarti, Dipanjan Sen, Mayukh Das, Thomas F. Schranghamer, Amritanand Sebastian, Saptarshi Das
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(48)
The representation of external stimuli in the form of action potentials or spikes constitutes the basis of energy efficient neural computation that emerging spiking neural networks (SNNs) aspire to imitate. With recent evidence suggesting that inform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6c375c6506713b58150c1d2df4a3dbe
https://pubmed.ncbi.nlm.nih.gov/35674268
https://pubmed.ncbi.nlm.nih.gov/35674268