Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Amran Mahfudh Yatmeidhy"'
Publikováno v:
Science and Technology of Advanced Materials, Vol 25, Iss 1 (2024)
First-principles calculations incorporating spin-orbit coupling are presented for a multiferroic material as a ferromagnetic/ferroelectric junction. We simulate the interface effect that cannot be described by the single-phase bulk. The in-plane unia
Externí odkaz:
https://doaj.org/article/32d9163cd2884bd38897f292187439f3
Autor:
Shumpei Fujii, Takamasa Usami, Yu Shiratsuchi, Adam M. Kerrigan, Amran Mahfudh Yatmeidhy, Shinya Yamada, Takeshi Kanashima, Ryoichi Nakatani, Vlado K. Lazarov, Tamio Oguchi, Yoshihiro Gohda, Kohei Hamaya
Publikováno v:
NPG Asia Materials, Vol 16, Iss 1, Pp 1-2 (2024)
Externí odkaz:
https://doaj.org/article/7d8b9c6a29484864a257348358c20bc4
Autor:
Jun Okabayashi, Takamasa Usami, Amran Mahfudh Yatmeidhy, Yuichi Murakami, Yu Shiratsuchi, Ryoichi Nakatani, Yoshihiro Gohda, Kohei Hamaya
Publikováno v:
NPG Asia Materials, Vol 16, Iss 1, Pp 1-10 (2024)
Abstract For the development of spintronic devices, the control of magnetization by a low electric field is necessary. The microscopic origin of manipulating spins relies on the control of orbital magnetic moments (m orb) by strain; this is essential
Externí odkaz:
https://doaj.org/article/3c3ef83f7d2843faad8ee83808e06a42
Publikováno v:
Applied Physics Express. 16:053001
We report the microscopic origin of strain-mediated changes in the magnetocrystalline anisotropy energy of the Co2FeSi, Co2MnSi, and Fe3Si Heusler alloys from the viewpoint of first-principles electron theory. Both Co2FeSi and Co2MnSi have similar an
Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi
Autor:
Shumpei Fujii, Takamasa Usami, Yu Shiratsuchi, Adam M. Kerrigan, Amran Mahfudh Yatmeidhy, Shinya Yamada, Takeshi Kanashima, Ryoichi Nakatani, Vlado K. Lazarov, Tamio Oguchi, Yoshihiro Gohda, Kohei Hamaya
Publikováno v:
NPG Asia Materials. 14
To overcome a bottleneck in spintronic applications such as those of ultralow-power magnetoresistive random-access memory devices, the electric-field control of magnetization vectors in ferromagnetic electrodes has shown much promise. Here, we show t
Publikováno v:
Japanese Journal of Applied Physics. 59(7):071001
金沢大学ナノマテリアル研究所 / 金沢大学理工研究域数物科学系
We study spin-polarized cation vacancies in wurtzite structure semiconductors (BeO, ZnO, ZnS, CdS, BN, AlN, GaN and GaP) by using first-principles calculatio
We study spin-polarized cation vacancies in wurtzite structure semiconductors (BeO, ZnO, ZnS, CdS, BN, AlN, GaN and GaP) by using first-principles calculatio