Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Amr M. S. Tosson"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 168-175 (2023)
Devices using emerging technologies and materials with the potential to outperform their silicon counterpart are actively explored in search of ways to extend Moore’s law. Among these technologies, low dimensional channel materials (LDMs) devices,
Externí odkaz:
https://doaj.org/article/b68f605d55874eb39931d4d0d6ed71e9
Publikováno v:
Proceedings of the Great Lakes Symposium on VLSI 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca857079c989973582cbacf141816ea7
https://doi.org/10.1145/3526241.3530336
https://doi.org/10.1145/3526241.3530336
Publikováno v:
2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00a863912b9fd825ed5dc8c4f7478012
https://doi.org/10.1109/nanoarch53687.2021.9642239
https://doi.org/10.1109/nanoarch53687.2021.9642239
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:3125-3137
Resistive RAM (RRAM) device has been extensively used as a scalable nonvolatile memory cell in neuromorphic systems due to its several advantages, including its small size and low-power requirements. However, resulting from the stochastic nature of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e0d2060ba062eaf4729232181f0e0b
https://doi.org/10.1109/tvlsi.2017.2734819
https://doi.org/10.1109/tvlsi.2017.2734819
Publikováno v:
ASICON
RRAM-based memories provide non-volatile and scalable data storage in advanced technologies. RRAM device, as a non-charge-based device, is intrinsically immune to radiation effects which promotes its usage in applications subject to high radiations s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1677785f157dd5b4c2b5facdb890100a
https://doi.org/10.1109/asicon.2017.8252399
https://doi.org/10.1109/asicon.2017.8252399
Publikováno v:
ISVLSI
Due to the limitation in speed and throughput of the traditional Von Neumann architecture, the interest in braininspired neuromorphic systems has been the focus of recent research activities. RRAM device has been extensively used as synapses in neuro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f51e2e888b04c5db8a1f78bc7da65ff7
https://doi.org/10.1109/isvlsi.2017.20
https://doi.org/10.1109/isvlsi.2017.20
Publikováno v:
ACM Great Lakes Symposium on VLSI
With the speed and power bottleneck in the conventional Von Neumann architecture, the interest in the neuromorphic systems has greatly increased in recent years. To create a highly dense communication network between the pre- and post-neurons, RRAM d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a19a56fe02afb40402ee925308ea69a2
https://doi.org/10.1145/3060403.3060431
https://doi.org/10.1145/3060403.3060431
Publikováno v:
ACM Great Lakes Symposium on VLSI
RRAM-based memory is a promising emerging technology for both on-chip and stand-alone non-volatile data storage in advanced technologies. In addition to its small dimensions, the RRAM device has many technological advantages including its low-program
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::029398d2d37de52d0df03db21007976c
https://doi.org/10.1145/2902961.2903017
https://doi.org/10.1145/2902961.2903017