Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Amos Amoako Boampong"'
Autor:
Song Lee, Jeong-In Lee, Chang-Hyun Kim, Jin-Hyuk Kwon, Jonghee Lee, Amos Amoako Boampong, Min-Hoi Kim
Publikováno v:
Science and Technology of Advanced Materials, Vol 24, Iss 1 (2023)
ABSTRACTThe charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT)
Externí odkaz:
https://doaj.org/article/2ceebd091e2f4a06b67429d772ebb84a
Autor:
Gunel Huseynova, Amos Amoako Boampong, Kyeong Min Yu, Ye-Seul Lee, Jonghee Lee, Min-Hoi Kim, Jae-Hyun Lee
Publikováno v:
Journal of Information Display, Vol 24, Iss 1, Pp 47-56 (2023)
We present an n-doped poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymer and its application in n-type oxide thin-film transistors (OxTFTs) as a source and drain electrode material. A reduced molecule of a cationic dye, methyl
Externí odkaz:
https://doaj.org/article/c2b4de21b2cf4b19ab1ce59401c1e9c7
Publikováno v:
Electronic Materials Letters. 17:406-413
Ferroelectric random access memory cell (FeRAM) consists of one selection transistor with high switching performance and one memory transistor with large hysteresis. The simple fabrication method for the selection transistor with high mobility and th
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4381-4384
We demonstrated an organic and oxide hybrid CMOS inverter with the solution-processed semiconductor and source/drain electrodes. For the solution-processed n- and p-type semiconductor, InGaZnO solution and TIPS-pentacene/PαMS blend were spin-coated
Autor:
Gunel Huseynova, Amos Amoako Boampong, Kyeong Min Yu, Ye-Seul Lee, Jonghee Lee, Min-Hoi Kim, Jae-Hyun Lee
We present an n-doped poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymer and its application in n-type oxide thin-film transistors (OxTFTs) as a source and drain electrode material. A reduced molecule of a cationic dye, methyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfe170a9158805771668b7cac8917356
Autor:
Eun-Kyung Noh, Amos Amoako Boampong, Yuji Shibasaki, Yoonseuk Choi, Jae-Hyun Lee, Yu Konno, Min-Hoi Kim
Publikováno v:
Materials, Vol 14, Iss 1276, p 1276 (2021)
Materials
Volume 14
Issue 5
Materials
Volume 14
Issue 5
We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers wit
Publikováno v:
Journal of nanoscience and nanotechnology. 21(3)
We demonstrated the enhancement of the retention characteristics in solution-processed ferroelectric memory transistors. For enhanced retention characteristics, solution-processed Indium Gallium Zinc Oxide (InGaZnO) semiconductor is used as an active
Publikováno v:
Advanced Electronic Materials. 8:2101079
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:7132-7136
We presented further analysis to explain how the surface morphology influence the mobility of the organic thin film transistors with gate insulator having large undulated surface (GU-OTFTs) and introduced a new parameter in order to clearly understan
Publikováno v:
Advanced Electronic Materials. 7:2100430