Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Amorphous indium gallium zinc oxides (a igzo)"'
Thin-film transistors (TFTs) are the fundamental building blocks of today's display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dris___00893::a72f9f1a9c0896594c5f28f05bdb58f5
http://resolver.tudelft.nl/uuid:e4d27324-8a04-4c22-82fa-a6800137d779
http://resolver.tudelft.nl/uuid:e4d27324-8a04-4c22-82fa-a6800137d779
Autor:
Thijs Bel, Gerwin H. Gelinck, Laura De Kort, Roy Verbeek, Joris de Riet, Mamidala Saketh Ram, Auke Jisk Kronemeijer
Publikováno v:
IEEE Transactions on Electron Devices, 4, 66, 1778-1782
IEEE Transactions on Electron Devices, 66(4):8653974, 1778-1782. Institute of Electrical and Electronics Engineers
IEEE Transactions on Electron Devices, 66(4):8653974, 1778-1782. Institute of Electrical and Electronics Engineers
Thin-film transistors (TFTs) are the fundamental building blocks of today’s display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7754e5451da48b5c3ac670e669834534
http://resolver.tudelft.nl/uuid:e4d27324-8a04-4c22-82fa-a6800137d779
http://resolver.tudelft.nl/uuid:e4d27324-8a04-4c22-82fa-a6800137d779
Autor:
Paul Heremans, Gerwin H. Gelinck, Nikolas P. Papadopoulos, Jan Genoe, S. Steudel, A. de Jamblinne de Meux, Ashutosh Tripathi, Maarten Rockele, Kris Myny, Manoj Nag
Publikováno v:
2016 IEEE International Electron Devices Meeting, IEDM 2016, 6.3.1-6.3.4
STARTPAGE=6.3.1;ENDPAGE=6.3.4;TITLE=2016 IEEE International Electron Devices Meeting, IEDM 2016
62nd IEEE International Electron Devices Meeting, IEDM 2016. 3 December 2016 through 7 December 2016, 6.3.1-6.3.4
2016 IEEE International Electron Devices Meeting (IEDM)
STARTPAGE=6.3.1;ENDPAGE=6.3.4;TITLE=2016 IEEE International Electron Devices Meeting, IEDM 2016
62nd IEEE International Electron Devices Meeting, IEDM 2016. 3 December 2016 through 7 December 2016, 6.3.1-6.3.4
2016 IEEE International Electron Devices Meeting (IEDM)
We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4517789014d00f8f4f2a7c6956c2101
https://research.tue.nl/nl/publications/24d82fdd-f07e-44ef-91aa-17ca57094572
https://research.tue.nl/nl/publications/24d82fdd-f07e-44ef-91aa-17ca57094572
We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dris___00893::e2b2072f4892210d763fc2b947de9eda
http://resolver.tudelft.nl/uuid:0125d920-ff43-4ab3-8d52-a968978f9a50
http://resolver.tudelft.nl/uuid:0125d920-ff43-4ab3-8d52-a968978f9a50