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Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters
Autor:
Sajed A. Chowdhury, Clifford L. Henderson, Pavlos C. Tsiartas, Katherine D. Dombrowski, Lewis W. Flanagin, Ammar N. Chinwalla, Sanju Pancholi, C. Grant Willson
Publikováno v:
Advances in Resist Technology and Processing XIV.
In the past, resist parameters (exposure and development parameters) were typically only available for a single set of processing conditions. Therefore, it has been impossible to explore the effect of processing conditions on resist performance using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21806a59711cc56c0fbd19c9d82b5d8
https://doi.org/10.1117/12.275820
https://doi.org/10.1117/12.275820
