Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ammar Issaoun"'
Autor:
Ammar Issaoun
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66ff6352898a1006c72a667dbc0b771
https://doi.org/10.1109/ims37962.2022.9865272
https://doi.org/10.1109/ims37962.2022.9865272
Autor:
Thomas Roedle, Ammar Issaoun
Publikováno v:
World Journal of Applied Physics. 6:1
This article deals with the extension of the small-signal model usage to GaN technologies benchmarking, and to the detection of internal oscillations occurring in highly optimized multi-finger GaN high-electron-mobility transistors (HEMTs). The propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5bce073082a7b971efd0ee8ebae08bf
https://doi.org/10.11648/j.wjap.20210601.11
https://doi.org/10.11648/j.wjap.20210601.11
Publikováno v:
2018 48th European Microwave Conference (EuMC).
Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dce023ec42557f217dd2f35affa189cb
https://doi.org/10.23919/eumc.2018.8541576
https://doi.org/10.23919/eumc.2018.8541576
Publikováno v:
Microwave and Optical Technology Letters. 51:1379-1382
A “thru-short” noise de-embedding method for MOSFETs is presented. The capability of the “thru-short” method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d032351365e7b1abcec00c07fe3dbf99
https://doi.org/10.1002/mop.24330
https://doi.org/10.1002/mop.24330
Publikováno v:
AEU - International Journal of Electronics and Communications. 60:367-375
This paper presents a large signal compact circuit simulation model for III–V heterojunction bipolar transistors (HBTs). The model is implemented as a user compiled model (UCM), in the agilent ADS circuit simulator, using C code. Though its simplic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161b4e6a4680f89c3eb077a3deabbc85
https://doi.org/10.1016/j.aeue.2005.05.017
https://doi.org/10.1016/j.aeue.2005.05.017
Publikováno v:
Microwave & Optical Technology Letters; May2009, Vol. 51 Issue 5, p1379-1382, 4p, 2 Diagrams, 1 Graph