Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Amith K Murali"'
Publikováno v:
Materials Science and Engineering: B. 96:111-114
Indium oxide powders were reacted in flowing ammonia at various temperatures and times to form indium nitride (InN), and the kinetics of the oxide- to- nitride reaction was quantitatively determined by X-ray diffraction analysis. The quantity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f46531c12b073bed817470a949e977a9
https://doi.org/10.1016/s0921-5107(02)00301-x
https://doi.org/10.1016/s0921-5107(02)00301-x
Autor:
Philip P. Power, Matthias Stender, Amith K Murali, Subhash H. Risbud, Christopher T. Nelson, Valerie J. Leppert, Anne M. Mayes, Pallab Banerjee
Publikováno v:
Philosophical Magazine B. 82:1047-1054
The objective of this work was to produce an ordered array of size-controlled gallium nitride (GaN) nanoparticles. The synthesis was performed by the in situ formulation and subsequent decomposition of cyclotrigallazane in a polystyrene (PS)-b-poly(4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67751316f67114dd6ccb29fa8a62571f
https://doi.org/10.1080/13642810208218360
https://doi.org/10.1080/13642810208218360
Publikováno v:
Materials Science and Engineering: B. 76:206-210
Controlled oxidation of GaN powders was performed inside xerogel cavities with the objective of demonstrating formation of composites of GaN nanoparticles embedded in a silicate matrix. A 60% reduction in GaN particle size was observed due to the oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ac5be2c5703a11cf7782912bff707b3
https://doi.org/10.1016/s0921-5107(00)00452-9
https://doi.org/10.1016/s0921-5107(00)00452-9
Autor:
Anirudha Barve, Subhash H. Risbud, Ian M. Kennedy, Amith K Murali, Valerie J. Leppert, Howard W. H. Lee
Publikováno v:
Nano Letters. 1:287-289
Nanoparticles of indium oxide, a transparent conducting oxide with a band gap close to GaN, were synthesized by pulsed laser ablation of a pure indium metal target. X-ray diffraction and transmission electron microscopy confirmed that nanocrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::258a3a4593cc9bb7743fe0b26fd83088
https://doi.org/10.1021/nl010013q
https://doi.org/10.1021/nl010013q
Autor:
T. Tyler, N.N. Chubun, Kai Liu, Subhash H. Risbud, Charles E. Hunt, Victor V. Zhirnov, M. Hajra, Amith K Murali, A.G. Chakhovskoi
Publikováno v:
IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586).
Wide band gap materials show promise for applications in coating of field emission tips. Recently nanocrystalline hexagonal GaN crystallites as small as 5 nm average diameter have been formed using reactive laser ablation of gallium metal in a nitrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b688fafc1a724c179faf11d0ce210db
https://doi.org/10.1109/ivmc.2001.939683
https://doi.org/10.1109/ivmc.2001.939683
Autor:
Amith K Murali, Kai Liu, A.G. Chakhovskoi, Victor V. Zhirnov, Subhash H. Risbud, Charles E. Hunt, M. Hajra, T. Tyler, N.N. Chubun
Publikováno v:
MRS Proceedings. 685
Arrays of p-type silicon micro-emitters have been formed using a subtractive tip fabrication technique. Following fabrication, the emitter surface was coated with GaN nanoparticles and nanocrystalline diamond by a dielectrophoresis deposition techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1766c8c020afc06cf34c0f39e0d283a9
https://doi.org/10.1557/proc-685-d16.2.1
https://doi.org/10.1557/proc-685-d16.2.1
Autor:
M. Hajra, N.N. Chubun, Charles E. Hunt, Amith K Murali, Subhash H. Risbud, Victor V. Zhirnov, Kai Liu, T. Tyler, A.G. Chakhovskoi
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:458
Wide band-gap materials show promise for applications in coating of field emission tips. Recently nanocrystalline hexagonal GaN crystallites as small as 12 nm average diameter have been formed using reactive laser ablation of gallium metal in nitroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fbae5e542d91398d17e33d324f94644
https://doi.org/10.1116/1.1540986
https://doi.org/10.1116/1.1540986