Zobrazeno 1 - 10
of 751
pro vyhledávání: '"Amitava, Dasgupta"'
Autor:
Amitava Dasgupta
Stress is an inevitable part of everyday life. Sometimes we manage it well. Other times, not so much. But understanding the role of stress in our overall health and wellness is essential to taking it head-on. It's not just that stress can take over o
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 294-302 (2023)
In this paper, kink effect observed in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress has been studied. The charge distribution in the diff
Externí odkaz:
https://doaj.org/article/c19c78361dc74771b4ce412633caa0fc
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 78-83 (2023)
In this paper, we report the effect of post-gate metallization annealing on the performance of GaN-based High Electron Mobility Transistors (HEMTs). The performances of HEMTs annealed at 200 °C (HEMT1) and at 400 °C (HEMT2) for 5 minutes in N2 ambi
Externí odkaz:
https://doaj.org/article/ba5d7f335eef4f758d3f19ef237336ce
Autor:
Amitava Dasgupta
Herbal supplements are available without prescription in many countries throughout the world and accounting for over $30 billion U.S dollar in sale. A majority of U.S population (25-40%) use herbal supplements while alternative medicines are major fo
Publikováno v:
Micromachines, Vol 14, Iss 1, p 71 (2022)
Transdermal drug delivery (TDD), which enables targeted delivery with microdosing possibilities, has seen much progress in the past few years. This allows medical professionals to create bespoke treatment regimens and improve drug adherence through r
Externí odkaz:
https://doaj.org/article/d3b9332802174b758a4774a3f4c1f69e
Autor:
Sruthi M. P., Ajay Shanbhag, Deleep R. Nair, Anjan Chakravorty, Muhammad Ashraful Alam, Nandita DasGupta, Amitava Dasgupta
Publikováno v:
IEEE Transactions on Electron Devices. 70:979-985
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56654280f00330488ce1ff4d452dd4eb
https://doi.org/10.1109/ted.2023.3240018
https://doi.org/10.1109/ted.2023.3240018
Autor:
Amitava Dasgupta
Publikováno v:
Therapeutic Drug Monitoring. 45:26-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3da4ec23612a7de3de693875ed9b59a
https://doi.org/10.1097/ftd.0000000000001005
https://doi.org/10.1097/ftd.0000000000001005
Publikováno v:
Therapeutic Drug Monitoring. 45:35-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fbcd5c9aa4170e2a7a1b3a5fe2428e7
https://doi.org/10.1097/ftd.0000000000001069
https://doi.org/10.1097/ftd.0000000000001069
Publikováno v:
IEEE Transactions on Electron Devices. 69:4408-4413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d69a7f51cfa0fe590d087a39692c1cc0
https://doi.org/10.1109/ted.2022.3181539
https://doi.org/10.1109/ted.2022.3181539
Autor:
Ajay Shanbhag, Ramdas P. Khade, Sujan Sarkar, M. P. Sruthi, Deleep Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta
Publikováno v:
Applied Physics Letters. 122
An accurate method to extract the thermal resistance (RTH) of GaN-on-Si high electron mobility transistors (HEMTs) is proposed. It is shown that by pulsing the substrate, instead of drain or gate as done in the existing methods, one can significantly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::274263502807f88e4a9849b8c5af9fce
https://doi.org/10.1063/5.0141198
https://doi.org/10.1063/5.0141198