Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Amita C. Patil"'
Publikováno v:
IEEE Transactions on Electron Devices. 60:4146-4151
This paper introduces a high-temperature fully monolithic high gain-bandwidth 6H-SiC transimpedance amplifier for capacitive sensor interfacing. The amplifier achieves a gain of 235 kΩ and a bandwidth of 0.61 MHz at room temperature. Results from th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::815cb6848f45ecfdaa8c39515b5dfb81
https://doi.org/10.1109/ted.2013.2287601
https://doi.org/10.1109/ted.2013.2287601
Publikováno v:
Materials Science Forum. :1115-1118
We report fabrication of lateral, n-channel, depletion-mode, junction-field-effect-transistor (JFET) monolithic analog integrated circuits (ICs) in 6H-SiC. Ti/TaSi2/Pt forms the contact metalization, Ti/Pt the interconnect metal, and the SiO2/Si3N4/S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0395f574b87f99860d8c0ef53a86d1b9
https://doi.org/10.4028/www.scientific.net/msf.645-648.1115
https://doi.org/10.4028/www.scientific.net/msf.645-648.1115
Autor:
Glenn M. Beheim, Amita C. Patil, Xiao-An Fu, Philip G. Neudeck, Mehran Mehregany, Steven L. Garverick
Publikováno v:
Materials Science Forum. :1083-1086
This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6026c6d75c32d726bda046b96fae72
https://doi.org/10.4028/www.scientific.net/msf.600-603.1083
https://doi.org/10.4028/www.scientific.net/msf.600-603.1083
Autor:
Glenn M. Beheim, Philip G. Neudeck, Xiao-An Fu, Mehran Mehregany, Amita C. Patil, Steven L. Garverick
Publikováno v:
Materials Science Forum. :1099-1102
This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::585c227520ca1b9d750cd3d9d9f72667
https://doi.org/10.4028/www.scientific.net/msf.600-603.1099
https://doi.org/10.4028/www.scientific.net/msf.600-603.1099
Publikováno v:
CICC
A family of fully-integrated differential amplifiers was designed and fabricated in 6H-SiC, n-channel JFET integrated-circuit technology. A single-stage amplifier with resistor loads has gain-bandwidth of ∼2.8 MHz, and differential-mode gain that v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d50bdb54287b289088d768c5782920e5
https://doi.org/10.1109/cicc.2009.5280889
https://doi.org/10.1109/cicc.2009.5280889
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
This paper reports the characterization and modeling of differential amplifiers constructed using integrated 6H-Silicon Carbide (SiC) depletion-mode n-channel JFETs operating at temperatures up to 450degC, along with off-chip passive components. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aedff89289692c2b6c613b9aaf00288
https://doi.org/10.1109/csics07.2007.33
https://doi.org/10.1109/csics07.2007.33