Accurate Graphene-Metal Junction Characterization

Autor: Matthias Konig, Gunther Ruhl, Amit Gahoi, Sebastian Wittmann, Tobias Preis, Joerg-Martin Batke, Ioan Costina, Max C. Lemme

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 7, Pp 219-226 (2019)

A reliable method is proposed for measuring specific contact resistivity (pC) for graphenemetal contacts, which is based on a contact end resistance measurement. We investigate the proposed method with simulations and confirm that the sheet resistanc

Externí odkaz: https://doaj.org/article/112ca46c6a4641b4866fa30c9293a11a

Contact Resistance Study of Various Metal Electrodes with CVD Graphene

Autor: Vikram Passi, Andreas Bablich, Max C. Lemme, Stefan Wagner, Amit Gahoi, Satender Kataria

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93aa08e55203d797d004d1a2f67ce590

Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions

Autor: Stefano Venica, Amit Gahoi, David Esseni, Luca Selmi, Max C. Lemme, Satender Kataria, Francesco Driussi, Himadri Pandey

Publikováno v: Advanced electronic materials 20(10), 2000386 (2020). doi:10.1002/aelm.202000386
Advanced Electronic Materials

The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R$_{C}$) are still open issues in graphene technology. Here, we demonstrate the importance of following clear protocols when extracting R$_{C}$ usi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::310f705098e44a7ae8511534190d289a

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

Autor: Stephan Pindl, Melkamu Belete, Max C. Lemme, Satender Kataria, Eros Reato, Fabian Aumer, Stefan Wagner, Doris Wittmann, Sebastian Wittmann, Amit Gahoi

Publikováno v: ACS Applied Electronic Materials
ACS applied electronic materials 2(5), 1235-1242 (2020). doi:10.1021/acsaelm.0c00051

Controlling the doping level in graphene during integration into silicon CMOS compatible devices is an open challenge. In general, the doping level in graphene is influenced via substrate interacti...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1381708d4756ef1d21ca98a159fc6267

Electrical properties of graphene-metal contacts

Autor: Vikram Passi, Gianluca Fiori, Alessandro Fortunelli, Giuseppe Iannaccone, Max C. Lemme, Amit Gahoi, Teresa Cusati

Publikováno v: Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Scientific reports 7, 5109 (2017). doi:10.1038/s41598-017-05069-7
Scientific reports (Nature Publishing Group) 7 (2017): 5109–5120. doi:10.1038/s41598-017-05069-7
info:cnr-pdr/source/autori:Cusati, Teresa; Fiori, Gianluca; Gahoi, Amit; Gahoi, Amit; Passi, Vikram; Passi, Vikram; Lemme, Max C.; Lemme, Max C.; Fortunelli, Alessandro; Iannaccone, Giuseppe/titolo:Electrical properties of graphene-metal contacts/doi:10.1038%2Fs41598-017-05069-7/rivista:Scientific reports (Nature Publishing Group)/anno:2017/pagina_da:5109/pagina_a:5120/intervallo_pagine:5109–5120/volume:7
Scientific Reports

The performance of devices and systems based on two-dimensional material systems depends critically on the quality of the contacts between 2D material and metal. A low contact resistance is an imperative requirement to consider graphene as a candidat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbded9aab12395e32b25b2f53c8cd0d4
https://doaj.org/article/f364cb5bb5f24de48a177b91d043c90c