Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Amiran Bibilashvili"'
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 505 (2021)
Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced
Externí odkaz:
https://doaj.org/article/cf9713c6d96e47b2a80da063799d35c5
Publikováno v:
2021 25th International Conference Electronics.
Nanograting (NG) is a new method for externally doping the surface of Si substrates only by creating nano-size indents. This geometry-induced doping (G-doping) occurs due to quantum effects ruling the patterned region. Our experimental investigations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40fdf413a0c2e15921d3221834e43ba
https://doi.org/10.1109/ieeeconf52705.2021.9467441
https://doi.org/10.1109/ieeeconf52705.2021.9467441
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 906:012022
In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4He+ and 40Ar+ are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8843deb71c8a0bf542e88fbd175fd1
https://doi.org/10.1088/1755-1315/906/1/012022
https://doi.org/10.1088/1755-1315/906/1/012022
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:667-671
The electrical and structural properties of hafnium oxide (HfO2) received by ultra violet (UV)-stimulated plasma anodizing were investigated. The plasma anodizing process is carried out at a relatively low temperature (400 °C) and distinguished as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba6b00809aad20541d85bc4e26d5eea
https://doi.org/10.1109/tdmr.2017.2751078
https://doi.org/10.1109/tdmr.2017.2751078
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 609:012051
Modern technologies for creating integrated circuit elements offer many innovations, both in terms of the technological cycle and the introduction of new technologies. Stimulated processes in this regard and their mechanism require a thorough study i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334300ab3c2faab03359200072004e06
https://doi.org/10.1088/1755-1315/609/1/012051
https://doi.org/10.1088/1755-1315/609/1/012051
Autor:
Lado Jibuti, Amiran Bibilashvili
Publikováno v:
Proceedings of the 39th International Academic Conference, Amsterdam.
In this work is given low-temperature plasma anodizing and magnetron sputtering technologies of receiving Hf and Y metals oxides, metal-insulator-semiconductor structure based on received oxides and research of oxides electro-physical parameters. Tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578ebbbf84f3087a7c35bcc3f4df31e6
https://doi.org/10.20472/iac.2018.039.019
https://doi.org/10.20472/iac.2018.039.019
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 362:012077
Nanosecond laser annealing of GaAs amorphized with B+ ions implantation was investigated. The recrystallization process observed in the experiment does not depend on the initial temperature of the samples (77K or 300K) and can be additive; the effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883f76b1fdc1f73bcfa72f0853c0134e
https://doi.org/10.1088/1755-1315/362/1/012077
https://doi.org/10.1088/1755-1315/362/1/012077
Autor:
A. Feinerman, L. B. Jangidze, B. B. Olsen, Avto Tavkhelidze, Amiran Bibilashvili, Hans Walitzki
Publikováno v:
Russian Microelectronics. 38:429-433
Modification of properties of metal films caused by indents on their surface are studied. It is shown that indents on a film surface lead to quantum state depression (QSD), i.e., a decrease in the density of quantum states of a free electron. The den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfd788b174a913d4c1df0562c097cd78
https://doi.org/10.1134/s1063739709060080
https://doi.org/10.1134/s1063739709060080
Publikováno v:
Nanotechnology Perceptions. 4:25-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4051d4ca6fb10ccfdbc70d148bfc734b
https://doi.org/10.4024/n24ta07.ntp.04.01
https://doi.org/10.4024/n24ta07.ntp.04.01
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 44:032002
In this paper we offer low temperature technology receiving GaAs oxide. For this purpose, we use plasma anodizing with ultraviolet irradiation. Formation native oxide of GaAs is a problem and solving this problem is a scientific challenge. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a8e36239760f7e14ba6e023b48e9af
https://doi.org/10.1088/1755-1315/44/3/032002
https://doi.org/10.1088/1755-1315/44/3/032002