Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Amirali Ghofrani"'
Autor:
Kwang-Ting Cheng, Luke Theogarajan, Amirali Ghofrani, Wei Lu, Miguel Angel Lastras-Montano, Melika Payvand, Siddharth Gaba
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 12:1-18
Recent advances in access-transistor-free memristive crossbars have demonstrated the potential of memristor arrays as high-density and ultra-low-power memory. However, with considerable variations in the write-time characteristics of individual memri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70a06517c94753a1a6b7c47827a507a
https://doi.org/10.1145/2717313
https://doi.org/10.1145/2717313
Autor:
Miguel Angel Lastras-Montano, Bhaswar Chakrabarti, Amirali Ghofrani, Kwang-Ting Cheng, Gina C. Adam, Advait Madhavan, Brian D. Hoskins, Melika Payvand, Luke Theogarajan, Mirko Prezioso, Dmitri B. Strukov
Publikováno v:
Scientific Reports. 7
Scientific Reports 7: Article number: 42429; published online: 14 February 2017; updated: 27 July 2017. M. Payvand, A. Madhavan, A. Ghofrani and L. Theogarajan were omitted from the author list in the original version of this Article. This has been c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c15c07bc2eca6e8da05be011c2f98d6
https://doi.org/10.1038/srep46874
https://doi.org/10.1038/srep46874
Autor:
Dmitri B. Strukov, Kwang-Ting Cheng, Melika Payvand, Miguel Angel Lastras-Montano, Brian D. Hoskins, Advait Madhavan, Bhaswar Chakrabarti, Luke Theogarajan, Amirali Ghofrani, Mirko Prezioso, Gina C. Adam
Publikováno v:
Scientific Reports
Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the eme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82ab5f2c9cd37c3cd77ae2ebc2b3932d
http://europepmc.org/articles/PMC5307953
http://europepmc.org/articles/PMC5307953
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 22:1738-1749
Aggressive technology scaling in modern chips resulted in complicated faulty timing behaviors, which necessitate undesirable long development cycle and high test volumes to ensure product quality. To reduce the test time, cost-effective and timing-ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07b99a04bb812f8a62d20610784d05c2
https://doi.org/10.1109/tvlsi.2013.2278172
https://doi.org/10.1109/tvlsi.2013.2278172
Publikováno v:
ISLPED
Recent advances in resistive memory technologies have demonstrated their potential to serve as next generation random access memories (RAM) which are fast, low-power, ultra-dense, and nonvolatile. However, owing to their stochastic filamentary nature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40cbcbc5fc799738eb7f614928ac858
https://doi.org/10.1145/2934583.2934590
https://doi.org/10.1145/2934583.2934590
Publikováno v:
HPCA
Access-transistor-free memristive crossbars have shown to be excellent candidates for next generation non-volatile memories. While the elimination of the transistor per memory element enables higher memory densities, it also introduces parasitic curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f86b45ca523bd696d7e52ba6e9cd41
https://doi.org/10.1109/hpca.2016.7446057
https://doi.org/10.1109/hpca.2016.7446057
Autor:
Amirali Ghofrani, Luca Benini, Miguel Angel Lastras-Montano, Rajesh Gupta, Abbas Rahimi, Kwang-Ting Cheng
Using associative memories to enable computing-with-memory is a promising approach to improve energy efficiency. Associative memories can be tightly coupled with processing elements to restore and later recall function responses for a subset of input
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b84d345e6409c238e963818242307da5
http://hdl.handle.net/11585/587075
http://hdl.handle.net/11585/587075
Publikováno v:
NANOARCH
Memristive devices are promising candidates for future high-density, power-efficient memories. The sneak path problem of purely-resistive crossbars and the inherent nanowire voltage drop, however, prevent the use of memristors in large-scale memory s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::938b3e56d9de354fc658947cc8ea8b2b
https://doi.org/10.1109/nanoarch.2015.7180575
https://doi.org/10.1109/nanoarch.2015.7180575
Autor:
Kwang-Ting Cheng, Dmitri B. Strukov, Advait Madhavan, Amirali Ghofrani, Luke Theogarajan, Melika Payvand, Miguel Angel Lastras-Montano, Justin Rofeh
Publikováno v:
ISCAS
Memristors are emerging as powerful nanoscale devices for diverse applications, such as high-density memories and neuromorphic applications. However, this nascent technology requires considerable advancement before this vision is realized. We present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8766fc2acdab0872e2097b3685f35109
https://doi.org/10.1109/iscas.2015.7168899
https://doi.org/10.1109/iscas.2015.7168899
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa89097e77e8db1d6a369f149abc62e
https://doi.org/10.7873/date.2015.0540
https://doi.org/10.7873/date.2015.0540