Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Amir-Hossein Tamaddon"'
Autor:
Julie Van Bel, Lander Verstraete, Hyo Seon Suh, Stefan De Gendt, Philippe Bezard, Jelle Vandereyken, Waikin Li, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Andreia Santos, Boaz Alperson, YoungJun Her
Publikováno v:
Novel Patterning Technologies 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64806be415ce6f6dafa17486845c4c96
https://doi.org/10.1117/12.2657990
https://doi.org/10.1117/12.2657990
Autor:
Lander Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi, Remi Vallat, Philippe Bezard, Jelle Vandereyken, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Waikin Li, Mihir Gupta, Roberto Fallica
Publikováno v:
Novel Patterning Technologies 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d378a1af12c28e862d51ffbae42ea738
https://doi.org/10.1117/12.2657939
https://doi.org/10.1117/12.2657939
Autor:
Victor M. Blanco Carballo, Eren Canga, Christiane Jehoul, Alain Moussa, Amir-Hossein Tamaddon, Cyrus Tabery, Gautam Gunjala, Boris Menchtchikov, Gabriel Zacca, Sanjay Lalbahadoersing, Arie den Boef, Ron Synowicki
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8d2bbff5fb0e41bb3880444df2770b3
https://doi.org/10.1117/12.2658084
https://doi.org/10.1117/12.2658084
Autor:
Anne-Laure Charley, Philippe Leray, Christophe Beral, Romuald Blanc, Amir-Hossein Tamaddon, Poulomi Das, Werner Gillijns, Ataklti Weldeslassie, Frederic Lazzarino
Publikováno v:
Extreme Ultraviolet Lithography 2020.
The key challenge to enable a good defectivity control for extreme ultraviolet (EUV) single expose at 32nm pitch is to understand what are the main drivers for defect generation. CD is one of the main contributors, and has many sources of variability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc25e3c1a992019bbe13305998e66054
https://doi.org/10.1117/12.2572865
https://doi.org/10.1117/12.2572865
Autor:
Chan-Ha Park, Jeroen Van de Kerkhove, Nouredine Rassoul, Anne-Laure Charley, Pieter Vanelderen, Frederic Lazzarino, Lieve Van Look, Amir-Hossein Tamaddon, Romuald Blanc, Frieda Van Roey, Geert Vandenberghe, Danilo De Simone, Kurt G. Ronse, Chang-Moon Lim, Junghyung Lee, Sarohan Park, Kilyoung Lee, Nadia Vandenbroeck, Roberto Fallica, Gian Lorusso
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet (EUV) materials are deemed as critical to enable and extend the EUV lithography technology. Currently both chemically amplified resist (CAR) and metal-oxide resist (MOR) platforms are candidates to print tight features on wafer, h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc1b20f28b8697fcc5bc1e231e9123f
https://doi.org/10.1117/12.2515170
https://doi.org/10.1117/12.2515170
Autor:
Stefan Decoster, Els Kesters, Amir-Hossein Tamaddon, Frederic Lazzarino, Victor M. Blanco Carballo, Diziana Vangoidsenhoven, Christophe Lorant
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
While the semiconductor industry has reached the high-volume manufacturing of the 7 nm technology node (N7), patterning processes for future technology nodes N5, N3 and even below, are being investigated and developed by research centers. To achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02bd7d175a07053eda2baa0fdc21ded1
https://doi.org/10.1117/12.2515173
https://doi.org/10.1117/12.2515173
Publikováno v:
Microelectronic Engineering. 114:131-135
In immersion lithography, the probability to leave water on a photoresist (PR) increases with the scan speed. After wet processes, in general, liquid droplets may remain on the substrates. The evaporation of these droplets coupled with the leaching o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d12b07d902ddc6d857a8649a1cf929
https://doi.org/10.1016/j.mee.2013.03.114
https://doi.org/10.1016/j.mee.2013.03.114
Autor:
M.M. Heyns, S. De Gendt, J. Vermant, Paul W. Mertens, Frank Holsteyns, Amir-Hossein Tamaddon, Guy Vereecke
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:N3081-N3086
Wetting and drying in wet cleaning process received a lot of attention to meet the requirements of advanced technology nodes. Drying performance is evaluated by the number of watermarks produced during the rinsing and drying steps. Watermarks appear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa596c845de69f6cf7eb72b0f637f716
https://doi.org/10.1149/2.014401jss
https://doi.org/10.1149/2.014401jss
Publikováno v:
Solid State Phenomena. 195:227-230
Although evaporation as a pure bulk phase transformation is well understood, when one adds solutes to the liquid, or brings the liquid into contact with a substrate, we obtain a new and rich variety of possible behaviors that we can access experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd2580b8528039e32a65b5379984001
https://doi.org/10.4028/www.scientific.net/ssp.195.227
https://doi.org/10.4028/www.scientific.net/ssp.195.227
Autor:
Herbert Struyf, Paul Mertens, Naser Belmiloud, Amir-Hossein Tamaddon, Geert Doumen, Marc Heyns
Publikováno v:
Solid State Phenomena. 195:239-242
With the downscaling of devices, due to device geometry shrinkage, the total number of cleaning steps has increased dramatically. As a result, the number of drying cycles after cleaning has increased as well. As the device shrinks with the integratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1aaaa83c96eb3c0977bb04fc55a7e3
https://doi.org/10.4028/www.scientific.net/ssp.195.239
https://doi.org/10.4028/www.scientific.net/ssp.195.239