Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Amir Zulkefli"'
Autor:
Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐g
Externí odkaz:
https://doaj.org/article/3893960294d244a7a799c9e01c2aaff1
Autor:
Shu Nakaharai, Yutaka Wakayama, Takuya Iwasaki, Ryoji Sahara, Ryoma Hayakawa, Bablu Mukherjee, Amir Zulkefli
Publikováno v:
ACS Applied Materials & Interfaces. 13:43030-43038
Using a single-device two-dimensional (2D) rhenium disulfide (ReS2) field-effect transistor (FET) with enhanced gas species selectivity by light illumination, we reported a selective and sensitive detection of volatile organic compound (VOC) gases. 2
Autor:
Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama
Publikováno v:
Advanced Electronic Materials. 9
Autor:
Amir, Zulkefli, Bablu, Mukherjee, Ryoji, Sahara, Ryoma, Hayakawa, Takuya, Iwasaki, Yutaka, Wakayama, Shu, Nakaharai
Publikováno v:
ACS applied materialsinterfaces. 13(36)
Using a single-device two-dimensional (2D) rhenium disulfide (ReS
Publikováno v:
ACS Photonics. 6:2277-2286
We fabricated few-layer, multilayer, and mixed-thickness rhenium disulfide (ReS2) based on a vertical van der Waals n–p junction for photosensing applications. ReS2 flake deposition onto a p+2Si substrate led to the formation of a n–p heterojunct
Autor:
Mohd Amir Zulkefli, Mohd Ambri Mohamed, Kim S. Siow, Burhanuddin Yeop Majlis, Jothiramalingam Kulothungan, Manoharan Muruganathan, Hiroshi Mizuta
Publikováno v:
Micromachines, Vol 8, Iss 8, p 236 (2017)
The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-b
Externí odkaz:
https://doaj.org/article/472af2242d85461e86f9fa1727a7e07a
Autor:
Amir Zulkefli, Bablu Mukherjee, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Yutaka Wakayama
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Amir Zulkefli, Bablu Mukherjee, Ryoma HAYAKAWA, Shu Nakaharai, Takuya Iwasaki, Yutaka Wakayama
Publikováno v:
Web of Science
Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4273f818dc0bdc75017f32677a143847
http://arxiv.org/abs/2009.08732
http://arxiv.org/abs/2009.08732
Publikováno v:
Sains Malaysiana. 47:619-633
Suis nanoelektromekanikal (NEM) mempunyai persamaan dengan suis konvensional semikonduktor apabila digunakan sebagai transistor dan penderia walaupun prinsip operasinya berbeza. Perbezaan prinsip operasi suis ini memberikan kelebihan kepada suis NEM
Autor:
Mohd Ambri Mohamed, Manoharan Muruganathan, Hiroshi Mizuta, Mohd Amir Zulkefli, Burhanuddin Yeop Majlis, Jothiramalingam Kulothungan, Kim Shyong Siow
Publikováno v:
Microsystem Technologies. 24:1179-1187
In this article, we report the finite element method (FEM) simulation of the suspended double-clamped graphene beam-based NEM switches with standard and perforated beam structures, to analyze the von Mises stress, the contour plot and the electrical