Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Amir M. Dabiran"'
Autor:
Ye Jia, Yueling Qin, Uttam Singisetti, Joshua S. Wallace, Joseph A. Gardella, Amir M. Dabiran
Publikováno v:
Journal of Electronic Materials. 45:2013-2018
In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band of
Autor:
Amir M. Dabiran, O. H. W. Siegmund, J. Tedesco, J. Hull, Jeffrey W. Elam, Anton S. Tremsin, Camden Ertley, Anil U. Mane
Publikováno v:
2017 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC).
Atomic layer deposition (ALD) techniques are being used to manufacture microchannel plate (MCP) imaging electron multipliers. The MCP substrates are borosilicate microcapillary arrays, which are more robust than traditional lead glass MCPs, allowing
Autor:
Amir M. Dabiran, Nripendra N. Halder, Palash Das, Sanjib Kabi, Rahul Kumar, Dhrubes Biswas, Peter Chow, Boris Borisov, Sanjay Kr. Jana
Publikováno v:
Electronic Materials Letters. 10:1087-1092
This paper presents an approach of compositional grading of the barrier in AlGaN/GaN quantum well heterostructure to achieve high two dimensional electron gas (2DEG) carrier concentration and mobility for RF power amplifier applications. Plasma assis
Autor:
James C. M. Hwang, Amir M. Dabiran, Subrata Halder, Kelson D. Chabak, Xi Luo, Walter R. Curtice, Dennis E. Walker
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 {\mu}m width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02f2e603c64c178aeaaf7ea93facd0eb
Autor:
Ankush Bag, Peter Chow, Amir M. Dabiran, U P Gomes, Sanjib Kabi, Partha Mukhopadhyay, Edward Yi Chang, Saptarsi Ghosh, Dhrubes Biswas, Utsav Banerjee
Publikováno v:
Journal of Electronic Materials. 43:1263-1270
A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on b
Autor:
Sylvain Doré, Stephen J. Pearton, Chien-Hsing Hsu, Fan Ren, Li Liu, Yuyin Xi, Peter Chow, Amir M. Dabiran, Chien-Fong Lo
Publikováno v:
Sensors and Actuators B: Chemical. 176:708-712
AlGaN/GaN high electron mobility transistors (HEMTs) functionalized with ZnO nanorods were used for sensing CO in the concentration range of 50–500 ppm balanced with air at ambient and temperatures from 25 to 250 °C. An increase of the HEMT drain
Autor:
Kevin S. Jones, Amir M. Dabiran, M. R. Holzworth, Shao-Tsu Hung, Chien-Hsing Hsu, Chi-Jung Chang, Chin-Ching Hsu, Fan Ren, Chien-Fong Lo, P. G. Whiting, Nicholas G. Rudawski, Stephen J. Pearton, Peter Chow, Byung Hwan Chu
Publikováno v:
International Journal of Hydrogen Energy. 37:13783-13788
In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO2 dispersion was synthesized via a hydrothermal method and selectively deposited
Autor:
Chien-Fong Lo, David J. Smith, Chih-Yang Chang, Byung Hwan Chu, Lin Zhou, David A. Cullen, Peter Chow, Amir M. Dabiran, Jihyun Kim, Hong Yeol Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton, Bentao Cui
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:L47-L51
AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2×1015 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMT
Autor:
Chih-Yang Chang, Ivan I. Kravchenko, Peter Chow, B. Cui, Fan Ren, Amir M. Dabiran, Stephen J. Pearton, Chien-Fong Lo
Publikováno v:
physica status solidi c. 7:2415-2418
We report on the novel normally-on/off AlN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy. With simple oxygen exposure, the threshold voltage can be tuned from -2.76 V to +1.13 V depending on the treatm
Autor:
Peter Chow, Amir M. Dabiran, Byung Hwan Chu, Yu-Lin Wang, Fan Ren, H. T. Wang, Nancy D. Denslow, K. J. Linthicum, Chih-Yang Chang, Jerry W. Johnson, Kevin J. Kroll, C. F. Dungen, George P. Papadi, E. L. Pine, Barbara J. Sheppard, Chien-Fong Lo, Stephen J. Pearton, James K. Coleman
Publikováno v:
Nanoscience and Nanotechnology Letters. 2:120-128