Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Amir Hossein Bayani"'
Autor:
Karin Larsson, Amir Hossein Bayani
Publikováno v:
ACS Omega
ACS Omega, Vol 5, Iss 24, Pp 14842-14846 (2020)
ACS Omega, Vol 5, Iss 24, Pp 14842-14846 (2020)
The process of Au intercalation into a SiC/buffer interface has been theoretically investigated here by using density functional theory (DFT) and the nudged elastic band (NEB) method. Energy barriers were at first calculated (using NEB) for the trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7700cfb2971f687c530677f67db35640
https://doi.org/10.1021/acsomega.0c01985
https://doi.org/10.1021/acsomega.0c01985
The search for an active, stable, and abundant semiconductor-based bifunctional catalysts for solar hydrogen production will make a substantial impact on the sustainable development of the society that does not rely on fossil reserves. The photocatal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f6571b2c1c15e048a7fe5e0f3e6852b
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-432633
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-432633
Autor:
Karin Larsson, Amir Hossein Bayani
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
This is a theoretical investigation where Density Functional Theory (DFT) has been used in studying the phenomenon of Au intercalation within the 4H-SiC/graphene interface. The electronic structure of some carefully chosen morphologies of the Au laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::862eff6ca55e722b4e8334cd2031194a
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-403372
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-403372
Publikováno v:
Results in Physics, Vol 17, Iss, Pp 103065-(2020)
The influence of substrate morphology on the Rashba band splitting at the Dirac point of graphene, has been theoretically investigated. More specifically, the possibility for this splitting to be caused by spin–orbit coupling (with the heavy metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f870a4c678eed4c72900a8df4ba36b2
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-408657
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-408657
Publikováno v:
Superlattices and Microstructures. 120:578-587
In this paper, we propose and analyze three different nanowire FinFETs: Silicon, Germanium and SiGe nanowire FinFETs. We find that the logic performance parameters such as Ion/Ioff ratio and drain-induced barrier lowering (DIBL) in the silicon struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402bbb3292969fc7ea7bf21823f78751
https://doi.org/10.1016/j.spmi.2018.06.022
https://doi.org/10.1016/j.spmi.2018.06.022
Autor:
Amin Jodat, Amir Hossein Bayani
Publikováno v:
Silicon. 10:2695-2699
This paper presents using density functional method to study nitrogen monoxide (NO) molecule physisorption with various concentrations on armchair graphene nanoribbon (GNR). We calculate the physical and electronic parameters of the GNR after nitroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf93bab82bb9ae4e5373103cf081f3b
https://doi.org/10.1007/s12633-018-9807-2
https://doi.org/10.1007/s12633-018-9807-2
Publikováno v:
Superlattices and Microstructures. 113:769-776
Here, we compare the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET) with 2.36 nm2 square cross-section area using tight-binding (TB) sp3d5s∗ model (full atomistic model (FAM)) and effective mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc7366fd31d6b0ebb3de0df86e6d2a9
https://doi.org/10.1016/j.spmi.2017.12.019
https://doi.org/10.1016/j.spmi.2017.12.019
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:091012
We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists of two (AGNR) electrodes with zigzag termination that are separated by a narrow gap. The Fermi level of two electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::740d0f0a236baeada510c1c6eb4ce444
https://doi.org/10.1149/2162-8777/ac2329
https://doi.org/10.1149/2162-8777/ac2329
Publikováno v:
Superlattices and Microstructures. 105:110-116
In this paper, germanium nanowires (GeNWs) with different cross-sectional areas are considered as the channel of a cylindrical surrounding gate field effect transistors (CSG-FETs) and the electronic properties of them are calculated through the densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f616bcf369d052104b87c54160639ca9
https://doi.org/10.1016/j.spmi.2017.03.020
https://doi.org/10.1016/j.spmi.2017.03.020
Autor:
Amin Jodat, Amir Hossein Bayani
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:M83-M87
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a22c512e53d564d210882669bc055d1
https://doi.org/10.1149/2.0221707jss
https://doi.org/10.1149/2.0221707jss