Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Amir H. Al-Bayati"'
Autor:
D.G. Armour, Amir H. Al-Bayati
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 67:279-286
The bombardment of solid surfaces with ions having energy below or close to the damage threshold can lead to the deposition of layers of crystalline material or to the formation of interesting surface compound layers. The structure of the grown mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0997074c2cb10898dcfc048204c3875a
https://doi.org/10.1016/0168-583x(92)95818-c
https://doi.org/10.1016/0168-583x(92)95818-c
Autor:
Kevin G. Orrman-Rossiter, Amir H. Al-Bayati, D.G. Armour, Stephen E. Donnelly, J. A. van den Berg
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 63:109-119
The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af93269ab8e918f67ff3cbc0a880a677
https://doi.org/10.1016/0168-583x(92)95179-u
https://doi.org/10.1016/0168-583x(92)95179-u
Autor:
J. A. van den Berg, Kevin G. Orrman-Rossiter, Stephen E. Donnelly, Amir H. Al-Bayati, D.G. Armour
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :197-202
Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10–200 eV 28Si+ and 30Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d28899a2a9dd0b4e90dbb87358c7115
https://doi.org/10.1016/0168-583x(91)95204-q
https://doi.org/10.1016/0168-583x(91)95204-q
Publikováno v:
Surface Science. 249:293-312
The effects of the initial surface conditions, the bombardment temperature and the post-bombardment annealing temperature on the residual damage in Si(OO1) due to 110 eV Cl+ and Ar+ irradiation were studied. It was found that the damage produced in H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d4375c587472419be296aa84f8ddc5f
https://doi.org/10.1016/0039-6028(91)90854-l
https://doi.org/10.1016/0039-6028(91)90854-l
Publikováno v:
Surface Science. 241:91-102
The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry. The analysis revealed that the oxide is an amorphous material of thickness 20 A. The results showed qualit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54b9952f3c189ec5b2763317fd2b786b
https://doi.org/10.1016/0039-6028(91)90214-d
https://doi.org/10.1016/0039-6028(91)90214-d
Publikováno v:
Surface Science. 237:213-231
Low energy Ar ion bombardment is increasingly used as a surface preparation prior to thin film deposition, and in the etching of semiconductor materials for modern microelectronic devices. A study of the radiation damage and gas build-up effects asso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55b33e387ff2b1a7b22300fbfe8e76a
https://doi.org/10.1016/0039-6028(90)90533-e
https://doi.org/10.1016/0039-6028(90)90533-e
Publikováno v:
Surface Science. 225:341-354
The GaAs(001) surface is a widely used surface for epitaxial growth. There is agreement about the surface structure under particular MBE growth conditions. There is, however, some controversy about the underlying physical effects of surface science t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::825deb5e72ad6dca64dd76611ef8e9ec
https://doi.org/10.1016/0039-6028(90)90455-h
https://doi.org/10.1016/0039-6028(90)90455-h
Autor:
Stephen E. Donnelly, Amir H. Al-Bayati, J. A. van den Berg, Kevin G. Orrman-Rossiter, D. R. G. Mitchell, S.R. Glanvill, C.J. Rossouw, D.G. Armour, Peter Miller
Publikováno v:
Scopus-Elsevier
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the fundamental processes involved in thin-film growth. In these experiments layers of silicon were deposited onto (001) silicon substrates using 30 eV and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81c3380d38e7af89547c2faf97d6669f
http://www.scopus.com/inward/record.url?eid=2-s2.0-0025446099&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0025446099&partnerID=MN8TOARS
