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of 10
pro vyhledávání: '"Amir Azordegan"'
Autor:
Z. Luo, H. Marchman, J. D. Byers, D. Soltz, Srinivas Vedula, Amir Azordegan, Gian Lorusso, Luca Grella, G. Storms, J. Varner, L. H. A. Leunissen, R. Kuppa
Publikováno v:
SPIE Proceedings.
CD-SEM is currently poised as the primary method of choice for CD metrology because of its nanometer scale spatial resolution, superior precision, and relatively high throughput. However, issues still continue to emerge that can threaten the measurem
Autor:
Philippe Leray, Hugo Bender, Ivan Pollentier, Tom Vandeweyer, Monique Ercken, Nadine Collaert, Olivier Richard, Gian Lorusso, J. McCormack, S. Shirke, Serge Biesemans, J. Prochazka, Christie Delvaux, Rita Rooyackers, Shaunee Cheng, Malgorzata Jurczak, Timothy Edward Long, B. Degroote, Amir Azordegan
Publikováno v:
SPIE Proceedings.
As we move forward to the 45 and 32nm node, MuGFET's (Multi-Gate Field-Effect Transistor) are considered more and more as a necessary alternative to keep pace with Moore's Law. If proven manufacturable, MuGFET's could eventually replace conventional
Autor:
Amir Azordegan, J. A. Croon, L. H. A. Leunissen, M. Ercken, Tony DiBiase, Hedong Yang, G. F. Lorusso
Publikováno v:
SPIE Proceedings.
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is the standard deviation. However, this approach is incomplete and ignores a substantial amount of information. We propose here a
Publikováno v:
SPIE Proceedings.
One of many challenges the process or metrology engineers face is incorrect flagging on the process control chart. It could either be a result of an un-optimized recipe that measures the wrong feature (a space instead of line) or a feature placement
Autor:
Ivan Pollentier, Amir Azordegan, Rita Rooyackers, Malgorzata Jurczak, Hugo Bender, O. Richard, S. Cheng, Serge Biesemans, Bart Degroote, Nadine Collaert, R. Kuppa, S. Shirke, T. Long, M. Ercken, J. Prochazka, Gian Francesco Lorusso
Publikováno v:
ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..
We describe a procedure to calibrate CD SEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70 nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10 nm. The accuracy of
Publikováno v:
SPIE Proceedings.
To have a more complete and clear picture for resist characterization, a second metric is needed to supplement the traditional linewidth data. A fast and non-destructive metrology system is desired to provide resist profile information. Electron scan
Publikováno v:
SPIE Proceedings.
An automated top-down CD-SEM technique, complimenting the existing high angle tilt SEM method has been developed for measuring features printed at a film thickness of 24 microns. Measurements of resist linewidth versus exposure dose were made using a
Autor:
Nadia Vandenbroeck, Amir Azordegan, Peter Leunissen, Tony DiBiase, C. Delvaux, Hedong Yang, Gian Francesco Lorusso, Frieda Van Roey, M. Ercken
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 5:033003
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is standard deviation . However, a substantial amount of information is ignored if only is measured. We use an automated approach t
Conference
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Conference
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