Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Amir A. Lakhani"'
Autor:
Amir A. Lakhani, J. J. L. Rascol, H. Hier, S. Ben Amor, Robert C. Potter, R. J. Higgins, Kevin P. Martin
Publikováno v:
Surface Science. 228:378-382
We report a study of transport in crossed electric and magnetic fields in a double harrier tunneling structure with a wide (600 A) well. Experiments were conducted on a lattice-matched GaInAs/AlInAs structure at 1.5 K in magnetic fields up to 23 T. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf87cf150425a34c9ba3303c381625d
https://doi.org/10.1016/0039-6028(90)90332-3
https://doi.org/10.1016/0039-6028(90)90332-3
Autor:
J. P. Jay-Gerin, Amir A. Lakhani
Publikováno v:
Journal of Low Temperature Physics. 35:1-7
The g-factor of conduction electrons in Cd3P2 at low temperatures is calculated as a function of carrier concentration, taking into account the InSb-like electronic energy-band structure of this material. In the case of typical samples with 1017, 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbe0f9483d1f40c2d8725802bcc6bfad
https://doi.org/10.1007/bf00121718
https://doi.org/10.1007/bf00121718
Autor:
Amir A. Lakhani, Ayub Fathimulla
Publikováno v:
Journal of Applied Physics. 54:4586-4589
AlN films were deposited on silicon (100, 111), fused quartz and GaAs (100) by sputtering in an Ar:N2 gas mixture. We report on the physical and chemical analysis of the films with the aid of scanning electron microscopy, x‐ray diffraction, and Aug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ccb012145b363f8e1e04ad4e03699c
https://doi.org/10.1063/1.332661
https://doi.org/10.1063/1.332661
Publikováno v:
Physical Review Letters. 32:1003-1006
We report the observation of Shubnikov-de Haas oscillations in the conductivity of surface holes in a $p$-type inversion layer of Si. The hole plasma is shown to be two dimensional. The effective mass varies from about $0.6{m}_{0}$ to $1{m}_{0}$ in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb8701530bdab8a20be01813a9f38cc
https://doi.org/10.1103/physrevlett.32.1003
https://doi.org/10.1103/physrevlett.32.1003
Publikováno v:
Solid State Communications. 40:741-744
The electrical conductivity at 10GHz, the dielectric constant, and the thermoelectric power (TEP) of [(C6H5)3PCH3]+(TCNQ)-2, from 230 up to 400 K, have been measured. This organic quasi-one-dimensional solid undergoes a first order phase transition a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c74f7a87adf4b5fe964354a85ea132
https://doi.org/10.1016/0038-1098(81)90819-x
https://doi.org/10.1016/0038-1098(81)90819-x
Publikováno v:
Physica Status Solidi (a). 56:K53-K56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22afa740fc354ac9a41c94b38a2588fe
https://doi.org/10.1002/pssa.2210560159
https://doi.org/10.1002/pssa.2210560159
Publikováno v:
Surface Science. 58:213-216
The amplitude of the quantum oscillations in the magnetoconductance of a silicon inversion layer has been studied as a function of gate voltage V g , for different values of the temperature T , applied magnetic field strength H and substrate bias V s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b45d2adee506bb72a9f32467d1c00b3
https://doi.org/10.1016/0039-6028(76)90140-0
https://doi.org/10.1016/0039-6028(76)90140-0
Autor:
Amir A. Lakhani
Publikováno v:
Journal of Applied Physics. 56:1888-1891
Ohmic contacts to n‐GaAs formed by the heat treatment of In films have been investigated. The widely‐accepted model for ohmic contact formation, involving the establishment of a heavily‐doped layer, fails in this case because In is not a n‐ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0225de8c7f4ffd632e0f270bda42199
https://doi.org/10.1063/1.334173
https://doi.org/10.1063/1.334173
Autor:
Amir A. Lakhani, J. P. Jay-Gerin
Publikováno v:
Journal of Low Temperature Physics. 28:15-20
Theg-factor of conduction electrons in Cd3As2 at low temperatures is calculated as a function of carrier concentration, taking into account the inverted HgTe-type energy band structure of this material. In as-grown cadmium arsenide with 2×1018 elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6080dbeb5daaf7e07deb14ec3ecd2bb
https://doi.org/10.1007/bf00658953
https://doi.org/10.1007/bf00658953
Publikováno v:
Physical Review B. 28:1978-1982
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9da1d9a0e2c0cfac5f1a27d3700d318
https://doi.org/10.1103/physrevb.28.1978
https://doi.org/10.1103/physrevb.28.1978